AffiliationMicrowave Semiconductor Corp.
MetadataShow full item record
RightsCopyright © International Foundation for Telemetering
Collection InformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.
AbstractThe availability of both silicon bipolar and gallium arsenide field effect microwave power transistors has been responsible for the development and manufacture of relatively high power, reliable, solid state amplifiers from L-band to K-band. Pulse power of a kilowatt at 1 GHz and 100 watts at 3.5 GHz are representative of what is practically achievable in pulse amplifiers while powers of 50 watts at 1.6 GHz, 6 watts at 6 GHz and 1 watt at 13 GHz are similarly representative of CW amplifiers. State-of-the-art development has currently achieved 1 watt at 21 GHz from a single device. Transistor characteristics, design considerations and performance of power amplifiers will be described.
SponsorsInternational Foundation for Telemetering