The formation mechanism of gradient porous Si in a contactless electrochemical process

Persistent Link:
http://hdl.handle.net/10150/615615
Title:
The formation mechanism of gradient porous Si in a contactless electrochemical process
Author:
Zhao, Mingrui; McCormack, Angelin; Keswani, Manish
Affiliation:
Univ Arizona, Chem & Environm Engn; Univ Arizona, Mat Sci & Engn
Issue Date:
2016
Publisher:
ROYAL SOC CHEMISTRY
Citation:
The formation mechanism of gradient porous Si in a contactless electrochemical process 2016, 4 (19):4204 J. Mater. Chem. C
Journal:
JOURNAL OF MATERIALS CHEMISTRY C
Rights:
CC-BY: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
Collection Information:
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.
Abstract:
Recently, gradient porous silicon has been developed to meet the requirements of various applications due to its unique physical and chemical properties. In this paper, the formation mechanism and morphology of radially symmetric gradient porous silicon films fabricated using a contactless method and their dependence on different process parameters, such as HF concentration, solution pH, current density and wafer resistivity, have been investigated in detail. The design and geometry of the sample assembly allow decreasing current density radially inward on the silicon surface in contact with HF based etchant solution. In the presence of surfactants, an increase in the distribution range of porosity, pore diameter and depth was observed by increasing HF concentration or lowering pH of the etchant solution, as the formation of pores was considered to be limited by the etch rates of silicon dioxide. Gradient porous silicon was also found to be successfully formulated both at high (10 mA cm2 ) and low (3 mA cm2 ) current densities. Interestingly, the morphological gradient was not developed when dimethyl sulfoxide (instead of surfactants) was used in the etchant solution potentially due to limitations in the availability of oxidizing species at the silicon–etchant solution interface.
Note:
Open access provided by RSC Gold Voucher.
ISSN:
2050-7526; 2050-7534
DOI:
10.1039/C6TC00309E
Version:
Final published version
Additional Links:
http://xlink.rsc.org/?DOI=C6TC00309E

Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Mingruien
dc.contributor.authorMcCormack, Angelinen
dc.contributor.authorKeswani, Manishen
dc.date.accessioned2016-07-06T00:22:11Z-
dc.date.available2016-07-06T00:22:11Z-
dc.date.issued2016-
dc.identifier.citationThe formation mechanism of gradient porous Si in a contactless electrochemical process 2016, 4 (19):4204 J. Mater. Chem. Cen
dc.identifier.issn2050-7526-
dc.identifier.issn2050-7534-
dc.identifier.doi10.1039/C6TC00309E-
dc.identifier.urihttp://hdl.handle.net/10150/615615-
dc.description.abstractRecently, gradient porous silicon has been developed to meet the requirements of various applications due to its unique physical and chemical properties. In this paper, the formation mechanism and morphology of radially symmetric gradient porous silicon films fabricated using a contactless method and their dependence on different process parameters, such as HF concentration, solution pH, current density and wafer resistivity, have been investigated in detail. The design and geometry of the sample assembly allow decreasing current density radially inward on the silicon surface in contact with HF based etchant solution. In the presence of surfactants, an increase in the distribution range of porosity, pore diameter and depth was observed by increasing HF concentration or lowering pH of the etchant solution, as the formation of pores was considered to be limited by the etch rates of silicon dioxide. Gradient porous silicon was also found to be successfully formulated both at high (10 mA cm2 ) and low (3 mA cm2 ) current densities. Interestingly, the morphological gradient was not developed when dimethyl sulfoxide (instead of surfactants) was used in the etchant solution potentially due to limitations in the availability of oxidizing species at the silicon–etchant solution interface.en
dc.language.isoenen
dc.publisherROYAL SOC CHEMISTRYen
dc.relation.urlhttp://xlink.rsc.org/?DOI=C6TC00309Een
dc.rightsCC-BY: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.en
dc.titleThe formation mechanism of gradient porous Si in a contactless electrochemical processen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Chem & Environm Engnen
dc.contributor.departmentUniv Arizona, Mat Sci & Engnen
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Cen
dc.description.noteOpen access provided by RSC Gold Voucher.en
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
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