Persistent Link:
http://hdl.handle.net/10150/614938
Title:
MICROWAVE TRANSISTOR POWER AMPLIFIERS
Author:
Balshem, Harold
Affiliation:
Microwave Semiconductor Corp.
Issue Date:
1981-10
Rights:
Copyright © International Foundation for Telemetering
Collection Information:
Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.
Publisher:
International Foundation for Telemetering
Journal:
International Telemetering Conference Proceedings
Abstract:
The availability of both silicon bipolar and gallium arsenide field effect microwave power transistors has been responsible for the development and manufacture of relatively high power, reliable, solid state amplifiers from L-band to K-band. Pulse power of a kilowatt at 1 GHz and 100 watts at 3.5 GHz are representative of what is practically achievable in pulse amplifiers while powers of 50 watts at 1.6 GHz, 6 watts at 6 GHz and 1 watt at 13 GHz are similarly representative of CW amplifiers. State-of-the-art development has currently achieved 1 watt at 21 GHz from a single device. Transistor characteristics, design considerations and performance of power amplifiers will be described.
Sponsors:
International Foundation for Telemetering
ISSN:
0884-5123; 0074-9079
Additional Links:
http://www.telemetry.org/

Full metadata record

DC FieldValue Language
dc.language.isoen_USen
dc.titleMICROWAVE TRANSISTOR POWER AMPLIFIERSen_US
dc.contributor.authorBalshem, Harolden
dc.contributor.departmentMicrowave Semiconductor Corp.en
dc.date.issued1981-10-
dc.rightsCopyright © International Foundation for Telemeteringen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
dc.publisherInternational Foundation for Telemeteringen
dc.description.abstractThe availability of both silicon bipolar and gallium arsenide field effect microwave power transistors has been responsible for the development and manufacture of relatively high power, reliable, solid state amplifiers from L-band to K-band. Pulse power of a kilowatt at 1 GHz and 100 watts at 3.5 GHz are representative of what is practically achievable in pulse amplifiers while powers of 50 watts at 1.6 GHz, 6 watts at 6 GHz and 1 watt at 13 GHz are similarly representative of CW amplifiers. State-of-the-art development has currently achieved 1 watt at 21 GHz from a single device. Transistor characteristics, design considerations and performance of power amplifiers will be described.en
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.identifier.issn0884-5123-
dc.identifier.issn0074-9079-
dc.identifier.urihttp://hdl.handle.net/10150/614938-
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.typetexten
dc.typeProceedingsen
dc.relation.urlhttp://www.telemetry.org/en
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