Persistent Link:
http://hdl.handle.net/10150/613618
Title:
IMPACT OF MOLECULAR BEAM EPITAXY TECHNOLOGY ON SPREAD SPECTRUM SYSTEMS
Author:
O’Clock, George D.; Erickson, L. Peter
Affiliation:
Physical Electronics Division
Issue Date:
1981-10
Rights:
Copyright © International Foundation for Telemetering
Collection Information:
Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.
Publisher:
International Foundation for Telemetering
Journal:
International Telemetering Conference Proceedings
Abstract:
The ultimate limitations in system performance capabilities are often due to constraints imposed by various device or chip fabrication processes. Recent advances in semiconductor processing technology have helped to lift some of the device performance barriers that have a negative impact on system performance. Molecular Beam Epitaxy is one particular technique that has the capability to fabricate a wide range of high performance semiconductor devices with high levels of reliability and yield. Molecular Beam Epitaxy (MBE) is an ultrahigh vacuum evaporation process for growing epitaxial films on various substrate materials. The basic constituents of the films are thermally evaporated and directed toward a heated substrate. The evaporated materials are deposited on the heated substrate surface forming a film. MBE offers the ability to maintain a higher level of precise control over material composition and film thickness required for semiconductor devices utilized in microwave and millimeter wave spread spectrum system applications.
Sponsors:
International Foundation for Telemetering
ISSN:
0884-5123; 0074-9079
Additional Links:
http://www.telemetry.org/

Full metadata record

DC FieldValue Language
dc.language.isoen_USen
dc.titleIMPACT OF MOLECULAR BEAM EPITAXY TECHNOLOGY ON SPREAD SPECTRUM SYSTEMSen_US
dc.contributor.authorO’Clock, George D.en
dc.contributor.authorErickson, L. Peteren
dc.contributor.departmentPhysical Electronics Divisionen
dc.date.issued1981-10-
dc.rightsCopyright © International Foundation for Telemeteringen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
dc.publisherInternational Foundation for Telemeteringen
dc.description.abstractThe ultimate limitations in system performance capabilities are often due to constraints imposed by various device or chip fabrication processes. Recent advances in semiconductor processing technology have helped to lift some of the device performance barriers that have a negative impact on system performance. Molecular Beam Epitaxy is one particular technique that has the capability to fabricate a wide range of high performance semiconductor devices with high levels of reliability and yield. Molecular Beam Epitaxy (MBE) is an ultrahigh vacuum evaporation process for growing epitaxial films on various substrate materials. The basic constituents of the films are thermally evaporated and directed toward a heated substrate. The evaporated materials are deposited on the heated substrate surface forming a film. MBE offers the ability to maintain a higher level of precise control over material composition and film thickness required for semiconductor devices utilized in microwave and millimeter wave spread spectrum system applications.en
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.identifier.issn0884-5123-
dc.identifier.issn0074-9079-
dc.identifier.urihttp://hdl.handle.net/10150/613618-
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.typetexten
dc.typeProceedingsen
dc.relation.urlhttp://www.telemetry.org/en
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