Persistent Link:
http://hdl.handle.net/10150/611431
Title:
EHF SOLID STATE POWER AMPLIFIER DESIGN FOR EXTENDED MISSION LIFE
Author:
Edwards, John; deGruyl, J.A.; Asmus, Julius R.
Affiliation:
LNR Communications, Inc.
Issue Date:
1984-10
Rights:
Copyright © International Foundation for Telemetering
Collection Information:
Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.
Publisher:
International Foundation for Telemetering
Journal:
International Telemetering Conference Proceedings
Abstract:
Recent developments at LNR have demonstrated practical solid state power amplifier (SSPA) configurations capable of generating 20 watts pf CW RF power with a 5% bandwidth at 20 GHz. The driving force behind these developments is the need for a reliable, cost effective SSPA deployment on spacecraft, consistent with a ten year and greater mission life. The operational life of the SSPA will be described in terms of (1) minimum acceptable output power, (2) system redundancy and (3) SSPA active device lifetime. The singular and combined effects of the defined categories on the SSPA operational life are examined. More specifically, the various aspects of a power backoff capability of the modular power amplifier design as they relate to system reliability are discussed and graphically demonstrated. The availability of gallium arsenide impact ionization avalanche transit time (IMPATT) diodes with proven performance and reliability has been responsible for the development and manufacture of high power, reliable solid state amplifiers from X-band to Q-band. Based on preliminary accelerated life test data of unscreened devices and a 1dB power reduction, an IMPATT diode reliability of < 50 FITs is projected, substantially exceeding a ten year mission life. IMPATT diode characteristics, and reliability design considerations and performance of power amplifiers at 20 GHz will be described.
Sponsors:
International Foundation for Telemetering
ISSN:
0884-5123; 0074-9079
Additional Links:
http://www.telemetry.org/

Full metadata record

DC FieldValue Language
dc.language.isoen_USen
dc.titleEHF SOLID STATE POWER AMPLIFIER DESIGN FOR EXTENDED MISSION LIFEen_US
dc.contributor.authorEdwards, Johnen
dc.contributor.authordeGruyl, J.A.en
dc.contributor.authorAsmus, Julius R.en
dc.contributor.departmentLNR Communications, Inc.en
dc.date.issued1984-10-
dc.rightsCopyright © International Foundation for Telemeteringen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
dc.publisherInternational Foundation for Telemeteringen
dc.description.abstractRecent developments at LNR have demonstrated practical solid state power amplifier (SSPA) configurations capable of generating 20 watts pf CW RF power with a 5% bandwidth at 20 GHz. The driving force behind these developments is the need for a reliable, cost effective SSPA deployment on spacecraft, consistent with a ten year and greater mission life. The operational life of the SSPA will be described in terms of (1) minimum acceptable output power, (2) system redundancy and (3) SSPA active device lifetime. The singular and combined effects of the defined categories on the SSPA operational life are examined. More specifically, the various aspects of a power backoff capability of the modular power amplifier design as they relate to system reliability are discussed and graphically demonstrated. The availability of gallium arsenide impact ionization avalanche transit time (IMPATT) diodes with proven performance and reliability has been responsible for the development and manufacture of high power, reliable solid state amplifiers from X-band to Q-band. Based on preliminary accelerated life test data of unscreened devices and a 1dB power reduction, an IMPATT diode reliability of < 50 FITs is projected, substantially exceeding a ten year mission life. IMPATT diode characteristics, and reliability design considerations and performance of power amplifiers at 20 GHz will be described.en
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.identifier.issn0884-5123-
dc.identifier.issn0074-9079-
dc.identifier.urihttp://hdl.handle.net/10150/611431-
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.typetexten
dc.typeProceedingsen
dc.relation.urlhttp://www.telemetry.org/en
All Items in UA Campus Repository are protected by copyright, with all rights reserved, unless otherwise indicated.