Persistent Link:
http://hdl.handle.net/10150/610830
Title:
High Performance S-Band Transistors for Radar and Communications
Author:
Schreyer, George W.
Affiliation:
TRW RF Devices Division
Issue Date:
1984-10
Rights:
Copyright © International Foundation for Telemetering
Collection Information:
Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.
Publisher:
International Foundation for Telemetering
Journal:
International Telemetering Conference Proceedings
Abstract:
Recent technoligical improvements have let to increased performance in prototype silicon bipolar transistors for S-band operation. These transistors may find application in both long and short pulse radars and CW communications links. Over 30 watts long pulse has been obtained with greater than 10 dB gain and 43% collector efficiency in the 3.1 to 3.5 GHz radar band and over 50 watts has been obtained at 2.7 GHZ with short pulse operation. More than 10 watts has been obtained under CW conditions at 4 Ghz with greater than 8 dB gain and 40% efficiency. The pulse device has significantly greater performance than the best reported GaAs devices in this band.
Sponsors:
International Foundation for Telemetering
ISSN:
0884-5123; 0074-9079
Additional Links:
http://www.telemetry.org/

Full metadata record

DC FieldValue Language
dc.language.isoen_USen
dc.titleHigh Performance S-Band Transistors for Radar and Communicationsen_US
dc.contributor.authorSchreyer, George W.en
dc.contributor.departmentTRW RF Devices Divisionen
dc.date.issued1984-10-
dc.rightsCopyright © International Foundation for Telemeteringen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
dc.publisherInternational Foundation for Telemeteringen
dc.description.abstractRecent technoligical improvements have let to increased performance in prototype silicon bipolar transistors for S-band operation. These transistors may find application in both long and short pulse radars and CW communications links. Over 30 watts long pulse has been obtained with greater than 10 dB gain and 43% collector efficiency in the 3.1 to 3.5 GHz radar band and over 50 watts has been obtained at 2.7 GHZ with short pulse operation. More than 10 watts has been obtained under CW conditions at 4 Ghz with greater than 8 dB gain and 40% efficiency. The pulse device has significantly greater performance than the best reported GaAs devices in this band.en
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.identifier.issn0884-5123-
dc.identifier.issn0074-9079-
dc.identifier.urihttp://hdl.handle.net/10150/610830-
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.typetexten
dc.typeProceedingsen
dc.relation.urlhttp://www.telemetry.org/en
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