Persistent Link:
http://hdl.handle.net/10150/609979
Title:
Solid State Microwave Power Amplifiers - An Overview
Author:
Lewinter, S. W.
Affiliation:
The Aerospace Corporation
Issue Date:
1978-11
Rights:
Copyright © International Foundation for Telemetering
Collection Information:
Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.
Publisher:
International Foundation for Telemetering
Journal:
International Telemetering Conference Proceedings
Abstract:
This paper summarizes results that have been achieved with various types of microwave solid state power amplifying devices and presents some projections of advances that can be expected within approximately a five year period. The frequency band surveyed extends from 1 to 100 GHz. The emphasis is on CW or high duty cycle pulse applications, where long life is of great importance, such as in a satellite communication system. The types of devices considered include the gallium arsenide field-effect transistor (GaAs FET), IMPATT diodes, bipolar transistors, Gunn diodes, TRAPATT diodes and electron bombarded semiconductor (EBS) devices. An overview of the technology of microwave power combiners is also included.
Sponsors:
International Foundation for Telemetering
ISSN:
0884-5123; 0074-9079
Additional Links:
http://www.telemetry.org/

Full metadata record

DC FieldValue Language
dc.language.isoen_USen
dc.titleSolid State Microwave Power Amplifiers - An Overviewen_US
dc.contributor.authorLewinter, S. W.en
dc.contributor.departmentThe Aerospace Corporationen
dc.date.issued1978-11-
dc.rightsCopyright © International Foundation for Telemeteringen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
dc.publisherInternational Foundation for Telemeteringen
dc.description.abstractThis paper summarizes results that have been achieved with various types of microwave solid state power amplifying devices and presents some projections of advances that can be expected within approximately a five year period. The frequency band surveyed extends from 1 to 100 GHz. The emphasis is on CW or high duty cycle pulse applications, where long life is of great importance, such as in a satellite communication system. The types of devices considered include the gallium arsenide field-effect transistor (GaAs FET), IMPATT diodes, bipolar transistors, Gunn diodes, TRAPATT diodes and electron bombarded semiconductor (EBS) devices. An overview of the technology of microwave power combiners is also included.en
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.identifier.issn0884-5123-
dc.identifier.issn0074-9079-
dc.identifier.urihttp://hdl.handle.net/10150/609979-
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.typetexten
dc.typeProceedingsen
dc.relation.urlhttp://www.telemetry.org/en
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