Persistent Link:
http://hdl.handle.net/10150/609960
Title:
Microwave and Millimeter Wave Semiconductor Devices
Author:
Fank, F. Beringer
Affiliation:
Central Research Laboratories
Issue Date:
1978-11
Rights:
Copyright © International Foundation for Telemetering
Collection Information:
Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.
Publisher:
International Foundation for Telemetering
Journal:
International Telemetering Conference Proceedings
Abstract:
Steady progress has been made this past year in nearly all microwave semiconductor technologies. Improvements in power, frequencies of operation, noise characteristics and perhaps most important at this time, reliability, have been made with GaAs FETs, GaAs Impatts, Silicon Impatts, and InP Gunn diodes. The latest state of the art as well as commercially available performance levels of each of these devices will be discussed. Both areas of microwaves and millimeter wave semiconductor devices will be covered as new millimeter wave systems requirements are pushing this technology to the forefront of development. The area of high peak powers with high average power have given an impetus to the renewed development of GaAs Impatts. Power combining techniques with these Impatts have led to replacement of medium power tubes. Present performance characteristics in single and combined technologies will be given. The expected trend for these "standard" devices over the next several years will be forecast along with a discussion of some new potential device technologies.
Sponsors:
International Foundation for Telemetering
ISSN:
0884-5123; 0074-9079
Additional Links:
http://www.telemetry.org/

Full metadata record

DC FieldValue Language
dc.language.isoen_USen
dc.titleMicrowave and Millimeter Wave Semiconductor Devicesen_US
dc.contributor.authorFank, F. Beringeren
dc.contributor.departmentCentral Research Laboratoriesen
dc.date.issued1978-11-
dc.rightsCopyright © International Foundation for Telemeteringen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
dc.publisherInternational Foundation for Telemeteringen
dc.description.abstractSteady progress has been made this past year in nearly all microwave semiconductor technologies. Improvements in power, frequencies of operation, noise characteristics and perhaps most important at this time, reliability, have been made with GaAs FETs, GaAs Impatts, Silicon Impatts, and InP Gunn diodes. The latest state of the art as well as commercially available performance levels of each of these devices will be discussed. Both areas of microwaves and millimeter wave semiconductor devices will be covered as new millimeter wave systems requirements are pushing this technology to the forefront of development. The area of high peak powers with high average power have given an impetus to the renewed development of GaAs Impatts. Power combining techniques with these Impatts have led to replacement of medium power tubes. Present performance characteristics in single and combined technologies will be given. The expected trend for these "standard" devices over the next several years will be forecast along with a discussion of some new potential device technologies.en
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.identifier.issn0884-5123-
dc.identifier.issn0074-9079-
dc.identifier.urihttp://hdl.handle.net/10150/609960-
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.typetexten
dc.typeProceedingsen
dc.relation.urlhttp://www.telemetry.org/en
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