Persistent Link:
http://hdl.handle.net/10150/609374
Title:
An Analog Memory Device
Author:
Uzunoglu, Vasil
Affiliation:
COMSAT Laboratories
Issue Date:
1975-10
Rights:
Copyright © International Foundation for Telemetering
Collection Information:
Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.
Publisher:
International Foundation for Telemetering
Journal:
International Telemetering Conference Proceedings
Abstract:
The analog memory device is a combination of a bipolar and a MOSFET device which stores information in analog form for several hours or more with no degradation of data. The emitter base junction of a bipolar transistor is covered with an SiO₂ layer and a voltage is applied to this point. With zero volts applied, the unit acts as a bipolar transistor. Increasing the voltage at this point increases the emitter injection efficiency of the bipolar transistor, which in turn increases the current gain of the device. An SiO₂ layer with no leakage paths can retain the charge applied to it for long periods of time; thus the gain will remain at this level as long as the charge remains on the oxide layer. A large number of such devices can be fabricated on a single chip. Such devices combined with other integrated circuits can be used, for example, for automatic equalization of transmission lines, echo suppression, and correlation detection.
Sponsors:
International Foundation for Telemetering
ISSN:
0884-5123; 0074-9079
Additional Links:
http://www.telemetry.org/

Full metadata record

DC FieldValue Language
dc.language.isoen_USen
dc.titleAn Analog Memory Deviceen_US
dc.contributor.authorUzunoglu, Vasilen
dc.contributor.departmentCOMSAT Laboratoriesen
dc.date.issued1975-10en
dc.rightsCopyright © International Foundation for Telemeteringen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
dc.publisherInternational Foundation for Telemeteringen
dc.description.abstractThe analog memory device is a combination of a bipolar and a MOSFET device which stores information in analog form for several hours or more with no degradation of data. The emitter base junction of a bipolar transistor is covered with an SiO₂ layer and a voltage is applied to this point. With zero volts applied, the unit acts as a bipolar transistor. Increasing the voltage at this point increases the emitter injection efficiency of the bipolar transistor, which in turn increases the current gain of the device. An SiO₂ layer with no leakage paths can retain the charge applied to it for long periods of time; thus the gain will remain at this level as long as the charge remains on the oxide layer. A large number of such devices can be fabricated on a single chip. Such devices combined with other integrated circuits can be used, for example, for automatic equalization of transmission lines, echo suppression, and correlation detection.en
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.identifier.issn0884-5123en
dc.identifier.issn0074-9079en
dc.identifier.urihttp://hdl.handle.net/10150/609374en
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.typetexten
dc.typeProceedingsen
dc.relation.urlhttp://www.telemetry.org/en
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