Persistent Link:
http://hdl.handle.net/10150/577280
Title:
Injection-locked Optically Pumped Semiconductor Laser
Author:
Lai, Yi-Ying
Issue Date:
2015
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
High-power, single-frequency, narrow-linewidth lasers emitting at tailored wavelength are desired for many applications, especially for precision spectroscopy. By way of a free-space resonator, optically pumped semiconductor lasers (OPSLs), a.k.a. vertical external-cavity surface-emitting lasers (VECSELs), can provide near diffraction-limited, high-quality Gaussian beams and are scalable in output power. Free space resonators also allow the insertion of the birefringent filter and the etalon to enforce single-frequency operation. In addition, the emission wavelengths of OPSLs are tailorable through bandgap engineering. These advantages above make OPSL a strong candidate of laser sources for spectroscopic applications including atomic spectroscopy as well as optical lattice clocks. In this research, a single-frequency laser source with high power is demonstrated by applying the injection-locking technique on OPSLs for the first time. The behaviors of the injection-locked OPSL are studied by varying parameters such as output coupling, injection wavelengths and injection power. It was found that the best injection wavelength is by approximately 2 nm shorter than the free-running slave laser at any given pump power. Below the lasing threshold for free-running operation, the laser starts the stimulated emission process as soon as it is pumped, working as a resonant amplifier. With proper parameters, the output power of the injection-locked laser exceeds the output power of its free-running condition. Over 9 W of single-frequency output power at 1015 nm is achieved. The output beam is near-diffraction-limited with Mₓ² = 1.04 and My² = 1.02. By analyzing the surface photoluminescence (PL) and the output performance of the laser, the saturation intensity of OPSLs is estimated to be 100 kW/cm² when the passive loss of 1.4% is assumed. The injection-locked system adds fairly low phase noise to that of the master laser. By measuring the beat note between the master laser and the injection-locked laser, the RMS values of the phase noise are 0.112 rad and 0.081 rad when using the T = 3% and T = 4% output couplers respectively.
Type:
text; Electronic Dissertation
Keywords:
lasers; OPSL; semiconductor lasers; single-mode; VECSEL; Optical Sciences; injection-locked
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Graduate College; Optical Sciences
Degree Grantor:
University of Arizona
Advisor:
Kaneda, Yushi; Jones, Ronald Jason

Full metadata record

DC FieldValue Language
dc.language.isoen_USen
dc.titleInjection-locked Optically Pumped Semiconductor Laseren_US
dc.creatorLai, Yi-Yingen
dc.contributor.authorLai, Yi-Yingen
dc.date.issued2015en
dc.publisherThe University of Arizona.en
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en
dc.description.abstractHigh-power, single-frequency, narrow-linewidth lasers emitting at tailored wavelength are desired for many applications, especially for precision spectroscopy. By way of a free-space resonator, optically pumped semiconductor lasers (OPSLs), a.k.a. vertical external-cavity surface-emitting lasers (VECSELs), can provide near diffraction-limited, high-quality Gaussian beams and are scalable in output power. Free space resonators also allow the insertion of the birefringent filter and the etalon to enforce single-frequency operation. In addition, the emission wavelengths of OPSLs are tailorable through bandgap engineering. These advantages above make OPSL a strong candidate of laser sources for spectroscopic applications including atomic spectroscopy as well as optical lattice clocks. In this research, a single-frequency laser source with high power is demonstrated by applying the injection-locking technique on OPSLs for the first time. The behaviors of the injection-locked OPSL are studied by varying parameters such as output coupling, injection wavelengths and injection power. It was found that the best injection wavelength is by approximately 2 nm shorter than the free-running slave laser at any given pump power. Below the lasing threshold for free-running operation, the laser starts the stimulated emission process as soon as it is pumped, working as a resonant amplifier. With proper parameters, the output power of the injection-locked laser exceeds the output power of its free-running condition. Over 9 W of single-frequency output power at 1015 nm is achieved. The output beam is near-diffraction-limited with Mₓ² = 1.04 and My² = 1.02. By analyzing the surface photoluminescence (PL) and the output performance of the laser, the saturation intensity of OPSLs is estimated to be 100 kW/cm² when the passive loss of 1.4% is assumed. The injection-locked system adds fairly low phase noise to that of the master laser. By measuring the beat note between the master laser and the injection-locked laser, the RMS values of the phase noise are 0.112 rad and 0.081 rad when using the T = 3% and T = 4% output couplers respectively.en
dc.typetexten
dc.typeElectronic Dissertationen
dc.subjectlasersen
dc.subjectOPSLen
dc.subjectsemiconductor lasersen
dc.subjectsingle-modeen
dc.subjectVECSELen
dc.subjectOptical Sciencesen
dc.subjectinjection-lockeden
thesis.degree.namePh.D.en
thesis.degree.leveldoctoralen
thesis.degree.disciplineGraduate Collegeen
thesis.degree.disciplineOptical Sciencesen
thesis.degree.grantorUniversity of Arizonaen
dc.contributor.advisorKaneda, Yushien
dc.contributor.advisorJones, Ronald Jasonen
dc.contributor.committeememberKaneda, Yushien
dc.contributor.committeememberJones, Ronald Jasonen
dc.contributor.committeememberMoloney, Jerome V.en
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