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Cold-wall low-pressure chemical-vapor-deposited silicon nitride for use as the undergate dielectric in field-effect transistors by David Robert Clark.
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|dc.title||Cold-wall low-pressure chemical-vapor-deposited silicon nitride for use as the undergate dielectric in field-effect transistors by David Robert Clark.||en|
|dc.creator||Clark, David Robert||en|
|dc.contributor.author||Clark, David Robert||en|
|dc.publisher||The University of Arizona.||en|
|dc.description.note||This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution images for any content in this item, please contact us at firstname.lastname@example.org.||en|
|dc.subject||Electric insulators and insulation -- Silicon nitride.||en|
|thesis.degree.grantor||University of Arizona||en|
|dc.identifier.callnumber||E9791 1981 550||en|
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