High contrast, all-optical gallium aluminum indium arsenide multiple quantum well asymmetric reflection modulator at 1.3 μm

Persistent Link:
http://hdl.handle.net/10150/291348
Title:
High contrast, all-optical gallium aluminum indium arsenide multiple quantum well asymmetric reflection modulator at 1.3 μm
Author:
Krol, Mark Francis, 1966-
Issue Date:
1992
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm², corresponding to a carrier density of 4.5 x 10¹⁷ cm⁻³ The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.; Physics, Condensed Matter.; Physics, Optics.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Optical Sciences
Degree Grantor:
University of Arizona
Advisor:
Peyghambarian, Nasser

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleHigh contrast, all-optical gallium aluminum indium arsenide multiple quantum well asymmetric reflection modulator at 1.3 μmen_US
dc.creatorKrol, Mark Francis, 1966-en_US
dc.contributor.authorKrol, Mark Francis, 1966-en_US
dc.date.issued1992en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractA high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm², corresponding to a carrier density of 4.5 x 10¹⁷ cm⁻³ The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectPhysics, Condensed Matter.en_US
dc.subjectPhysics, Optics.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorPeyghambarian, Nasseren_US
dc.identifier.proquest1351310en_US
dc.identifier.bibrecord.b27149778en_US
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