Persistent Link:
http://hdl.handle.net/10150/282581
Title:
OPTICAL PROPERTIES OF RADIATION DAMAGED SILICON-CARBIDE
Author:
Ballart, Ralph
Issue Date:
1980
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The reflectivity of crystalline and radiation-damaged silicon carbide and silicon has been measured in the 2-12 eV spectral region. Measurements were made using a standard Seya-Namioka Monochrometer which was modified to compensate for the fluctuations of the light source and interfaced to a micro-computer to facilitate data collection. The reflectivities of crystalline silicon carbide polytypes 6H, 15R, and 4H were found to be similar and the reflectivity of 3C-SiC showed agreement with the predictions of published band structure calculations. The observed reflectivity of radiation damage SiC agreed with the prediction of a simple model which takes into account the breakdown of k(→) -conservation and uses a realistic Bethe-lattice Hamiltonian to calculate the amorphous valence density of electron states.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Silicon carbide -- Effect of radiation on.; Silicon carbide.; Amorphous semiconductors.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Graduate College; Physics
Degree Grantor:
University of Arizona
Advisor:
Young, Richard

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleOPTICAL PROPERTIES OF RADIATION DAMAGED SILICON-CARBIDEen_US
dc.creatorBallart, Ralphen_US
dc.contributor.authorBallart, Ralphen_US
dc.date.issued1980en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe reflectivity of crystalline and radiation-damaged silicon carbide and silicon has been measured in the 2-12 eV spectral region. Measurements were made using a standard Seya-Namioka Monochrometer which was modified to compensate for the fluctuations of the light source and interfaced to a micro-computer to facilitate data collection. The reflectivities of crystalline silicon carbide polytypes 6H, 15R, and 4H were found to be similar and the reflectivity of 3C-SiC showed agreement with the predictions of published band structure calculations. The observed reflectivity of radiation damage SiC agreed with the prediction of a simple model which takes into account the breakdown of k(→) -conservation and uses a realistic Bethe-lattice Hamiltonian to calculate the amorphous valence density of electron states.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectSilicon carbide -- Effect of radiation on.en_US
dc.subjectSilicon carbide.en_US
dc.subjectAmorphous semiconductors.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplinePhysicsen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorYoung, Richarden_US
dc.identifier.proquest8027752en_US
dc.identifier.oclc7712141en_US
dc.identifier.bibrecord.b13499051en_US
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