Prediction and hardening techniques for SEGR in power MOSFET devices

Persistent Link:
http://hdl.handle.net/10150/282345
Title:
Prediction and hardening techniques for SEGR in power MOSFET devices
Author:
Allenspach, Mark, 1967-
Issue Date:
1997
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Single Event Gate Rupture (SEGR) induced by an energetic ion traversing a MOSFET may cause catastrophic failure of the device. The mechanism for SEGR in a power MOSFET structure is investigated in this work. A simple analytical prediction method is introduced. This prediction method allows evaluation of device SEGR sensitivity through 2-D computer simulations and therefore avoids the need for time consuming and costly experiments on an ion accelerator. A thorough investigation of SEGR sensitivity dependence is shown for a variety of influencing factors such as (i) device parametric variations, (ii) ion strike characteristics, and (iii) device operation temperature. Based on knowledge of the physical model for the SEGR mechanism and the utilization of simulation results and experimental SEGR data, useful SEGR hardening techniques are suggested.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Engineering, General.; Engineering, Electronics and Electrical.; Physics, Radiation.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Brews, John R.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titlePrediction and hardening techniques for SEGR in power MOSFET devicesen_US
dc.creatorAllenspach, Mark, 1967-en_US
dc.contributor.authorAllenspach, Mark, 1967-en_US
dc.date.issued1997en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractSingle Event Gate Rupture (SEGR) induced by an energetic ion traversing a MOSFET may cause catastrophic failure of the device. The mechanism for SEGR in a power MOSFET structure is investigated in this work. A simple analytical prediction method is introduced. This prediction method allows evaluation of device SEGR sensitivity through 2-D computer simulations and therefore avoids the need for time consuming and costly experiments on an ion accelerator. A thorough investigation of SEGR sensitivity dependence is shown for a variety of influencing factors such as (i) device parametric variations, (ii) ion strike characteristics, and (iii) device operation temperature. Based on knowledge of the physical model for the SEGR mechanism and the utilization of simulation results and experimental SEGR data, useful SEGR hardening techniques are suggested.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectEngineering, General.en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectPhysics, Radiation.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorBrews, John R.en_US
dc.identifier.proquest9729524en_US
dc.identifier.bibrecord.b34819861en_US
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