Fundamental aspects of particulate contamination of tungsten and thermal oxide wafers during chemical-mechanical polishing

Persistent Link:
http://hdl.handle.net/10150/282301
Title:
Fundamental aspects of particulate contamination of tungsten and thermal oxide wafers during chemical-mechanical polishing
Author:
Chilkunda, Raghunath, 1965-
Issue Date:
1997
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Chemical-mechanical polishing (CMP) has emerged as a new processing technique for achieving a high degree of planarity (< 10 μm) for submicron devices in very large scale integrated (VLSI) process technology. Metal as well dielectic films can be planarized using CMP. Polishing of tungsten (W) and interlayer dielectric (SiO₂) films is carried out using alumina (Al₂O₃) based slurries which typically contain acids, complexing and oxidizing agents. One of the challenges of CMP is the effective removal of slurry particles (e.g., Al₂O₃) that are deposited on the wafer (e.g., W) surface during polishing. Control of particulate deposition during CMP as well as the development of post CMP cleaning techniques to remove deposited particles require an understanding of the surface and solution chemistry of the wafers and particles under polishing conditions. In this research, an attempt is made to develop an understanding of the importance of the electrostatic interactions in particle deposition using electrokinetic potential data, particle deposition results from small scale polishing experiments and calculated interaction energies between a particle and wafer surface. The electrokinetic potential of tungsten, thermal oxide (SiO₂) wafers and alumina particles were measured as a function of solution chemistry. The measured electrokinetic potential data was used to calculate the interaction energy between an alumina particle and a wafer (e.g., W) surface using the well known DLVO (Derjaguin-Landau-Verwey-Overbeek) theory.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Chemistry, Inorganic.; Physics, Condensed Matter.; Engineering, Materials Science.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Graduate College; Science and Engineering
Degree Grantor:
University of Arizona
Advisor:
Raghavan, Srini

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleFundamental aspects of particulate contamination of tungsten and thermal oxide wafers during chemical-mechanical polishingen_US
dc.creatorChilkunda, Raghunath, 1965-en_US
dc.contributor.authorChilkunda, Raghunath, 1965-en_US
dc.date.issued1997en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractChemical-mechanical polishing (CMP) has emerged as a new processing technique for achieving a high degree of planarity (< 10 μm) for submicron devices in very large scale integrated (VLSI) process technology. Metal as well dielectic films can be planarized using CMP. Polishing of tungsten (W) and interlayer dielectric (SiO₂) films is carried out using alumina (Al₂O₃) based slurries which typically contain acids, complexing and oxidizing agents. One of the challenges of CMP is the effective removal of slurry particles (e.g., Al₂O₃) that are deposited on the wafer (e.g., W) surface during polishing. Control of particulate deposition during CMP as well as the development of post CMP cleaning techniques to remove deposited particles require an understanding of the surface and solution chemistry of the wafers and particles under polishing conditions. In this research, an attempt is made to develop an understanding of the importance of the electrostatic interactions in particle deposition using electrokinetic potential data, particle deposition results from small scale polishing experiments and calculated interaction energies between a particle and wafer surface. The electrokinetic potential of tungsten, thermal oxide (SiO₂) wafers and alumina particles were measured as a function of solution chemistry. The measured electrokinetic potential data was used to calculate the interaction energy between an alumina particle and a wafer (e.g., W) surface using the well known DLVO (Derjaguin-Landau-Verwey-Overbeek) theory.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectChemistry, Inorganic.en_US
dc.subjectPhysics, Condensed Matter.en_US
dc.subjectEngineering, Materials Science.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineScience and Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorRaghavan, Srinien_US
dc.identifier.proquest9729445en_US
dc.identifier.bibrecord.b3479640xen_US
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