Semiconductor modification and characterization with a scanning probe microscope

Persistent Link:
http://hdl.handle.net/10150/282152
Title:
Semiconductor modification and characterization with a scanning probe microscope
Author:
Ruskell, Todd Gary, 1969-
Issue Date:
1996
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The capabilities of a commercially available atomic force microscope system have been expanded to include sub-picoampere measurements of local surface conductivity. This multiple mode analysis tool is capable of providing local I/V curves, current maps at a constant voltage, or voltage maps at a constant current, simultaneously with the usual topographic data obtained for a given sample. The resulting electrical maps and local I/V curves from several samples are presented, and their interpretation discussed. Additionally, this system has been used for field-induced silicon oxide growth and, for the first time, silicon nitride growth. The mechanism for both SiO2 and Si3 growth is explored, revealing the possibility of precisely controlling the uniformity of the lithographed features.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.; Physics, Electricity and Magnetism.; Physics, Condensed Matter.; Engineering, Materials Science.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Graduate College; Optical Sciences
Degree Grantor:
University of Arizona
Advisor:
Sarid, Dror

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleSemiconductor modification and characterization with a scanning probe microscopeen_US
dc.creatorRuskell, Todd Gary, 1969-en_US
dc.contributor.authorRuskell, Todd Gary, 1969-en_US
dc.date.issued1996en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe capabilities of a commercially available atomic force microscope system have been expanded to include sub-picoampere measurements of local surface conductivity. This multiple mode analysis tool is capable of providing local I/V curves, current maps at a constant voltage, or voltage maps at a constant current, simultaneously with the usual topographic data obtained for a given sample. The resulting electrical maps and local I/V curves from several samples are presented, and their interpretation discussed. Additionally, this system has been used for field-induced silicon oxide growth and, for the first time, silicon nitride growth. The mechanism for both SiO2 and Si3 growth is explored, revealing the possibility of precisely controlling the uniformity of the lithographed features.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectPhysics, Electricity and Magnetism.en_US
dc.subjectPhysics, Condensed Matter.en_US
dc.subjectEngineering, Materials Science.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSarid, Droren_US
dc.identifier.proquest9713377en_US
dc.identifier.bibrecord.b34372167en_US
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