Structural and electrical characterization of low-dose low-energy SIMOX materials

Persistent Link:
http://hdl.handle.net/10150/280614
Title:
Structural and electrical characterization of low-dose low-energy SIMOX materials
Author:
Jeoung, Jun Sik
Issue Date:
2004
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The effects of implantation dose, energy, and annealing conditions on the microstructure and the formation and evolution of defects in the low-dose, low-energy SIMOX materials were investigated using transmission electron microscopy (TEM), scanning electron microscopy, scanning electron microscopy (SEM), optical microscopy secondary ion mass spectroscopy (SIMS), and Rutherford backscattering spectrometry (RBS). The quality of top Si layer and buried oxide layer (BOX) was also characterized with the electrical measurements. From the structural characterization of 100 keV implanted samples, it was found that the optimum dose window to form a continuous BOX layer after annealing was 3.0 to 3.5 x 10¹⁷ O⁺/cm². In addition, the formation mechanisms of dislocations and stacking faults in SIMOX materials were also proposed. The Hg-based pseudo-MOSFET technique was a very effective in-situ technique to evaluate the electrical quality of low-dose low-energy SIMOX. Based on the comparisons of device parameters of low-dose low-energy SIMOX and commercial SIMOX samples, we found that the quality of top Si layer of SIMOX sample prepared at 100 keV with a dose of 3.5 x 10¹⁷ O⁺/cm² was excellent. However, the interface properties (interfacial trap density) needed to be improved. The dielectric quality of low-dose low-energy SIMOX evaluated by breakdown voltage measurements showed a strong dependency on the microstructure of samples.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.; Engineering, Materials Science.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Graduate College; Materials Science and Engineering
Degree Grantor:
University of Arizona
Advisor:
Seraphin, Supapan

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleStructural and electrical characterization of low-dose low-energy SIMOX materialsen_US
dc.creatorJeoung, Jun Siken_US
dc.contributor.authorJeoung, Jun Siken_US
dc.date.issued2004en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe effects of implantation dose, energy, and annealing conditions on the microstructure and the formation and evolution of defects in the low-dose, low-energy SIMOX materials were investigated using transmission electron microscopy (TEM), scanning electron microscopy, scanning electron microscopy (SEM), optical microscopy secondary ion mass spectroscopy (SIMS), and Rutherford backscattering spectrometry (RBS). The quality of top Si layer and buried oxide layer (BOX) was also characterized with the electrical measurements. From the structural characterization of 100 keV implanted samples, it was found that the optimum dose window to form a continuous BOX layer after annealing was 3.0 to 3.5 x 10¹⁷ O⁺/cm². In addition, the formation mechanisms of dislocations and stacking faults in SIMOX materials were also proposed. The Hg-based pseudo-MOSFET technique was a very effective in-situ technique to evaluate the electrical quality of low-dose low-energy SIMOX. Based on the comparisons of device parameters of low-dose low-energy SIMOX and commercial SIMOX samples, we found that the quality of top Si layer of SIMOX sample prepared at 100 keV with a dose of 3.5 x 10¹⁷ O⁺/cm² was excellent. However, the interface properties (interfacial trap density) needed to be improved. The dielectric quality of low-dose low-energy SIMOX evaluated by breakdown voltage measurements showed a strong dependency on the microstructure of samples.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectEngineering, Materials Science.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineMaterials Science and Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSeraphin, Supapanen_US
dc.identifier.proquest3145078en_US
dc.identifier.bibrecord.b47212731en_US
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