Persistent Link:
http://hdl.handle.net/10150/278760
Title:
Characterization techniques for contaminated gate oxide
Author:
Damianou, Christakis, 1964-
Issue Date:
1990
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The effect of homogeneous contamination on the oxide integrity is studied by electrical measurements. The contamination is introduced in the Buffered Oxide Etchant (BOE) used for the pre-oxidation clean. The DC parametric test of forcing 1 nA and measuring voltage across the oxide is used to relate contamination to the leakage current and also to the number of failures. The factors affecting the measured voltage such as temperature, light and noise are eliminated so that contamination dominates the change in the measured voltage. The current-transport mechanism through the oxide was found to obey the Fowler-Nordheim equation at high fields. The barrier height at both interfaces was lowered in some devices. A technique for measuring the low-field breakdown which is caused by defects in the oxide is developed.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Hohl, J. H.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleCharacterization techniques for contaminated gate oxideen_US
dc.creatorDamianou, Christakis, 1964-en_US
dc.contributor.authorDamianou, Christakis, 1964-en_US
dc.date.issued1990en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe effect of homogeneous contamination on the oxide integrity is studied by electrical measurements. The contamination is introduced in the Buffered Oxide Etchant (BOE) used for the pre-oxidation clean. The DC parametric test of forcing 1 nA and measuring voltage across the oxide is used to relate contamination to the leakage current and also to the number of failures. The factors affecting the measured voltage such as temperature, light and noise are eliminated so that contamination dominates the change in the measured voltage. The current-transport mechanism through the oxide was found to obey the Fowler-Nordheim equation at high fields. The barrier height at both interfaces was lowered in some devices. A technique for measuring the low-field breakdown which is caused by defects in the oxide is developed.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorHohl, J. H.en_US
dc.identifier.proquest1342959en_US
dc.identifier.bibrecord.b26622038en_US
All Items in UA Campus Repository are protected by copyright, with all rights reserved, unless otherwise indicated.