Comparison of methods for extracting minority carrier lifetime from MOS capacitors

Persistent Link:
http://hdl.handle.net/10150/278309
Title:
Comparison of methods for extracting minority carrier lifetime from MOS capacitors
Author:
Park, Young-bog, 1963-
Issue Date:
1993
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The minority carrier generation lifetime is a parameter of central importance in the characterization, design, and operation of solid state devices. Various methods have been described for measuring the lifetime using an MOS capacitor (MOS-C). They can be classified according to the kind of voltage applied, the quantities measured, and the required elaboration of experimental results. This thesis discusses two groups of methods for determining the lifetime using an MOS-C: pulsed voltage methods and voltage sweep methods. The objective of this thesis is to give a comprehensive review and comparison of various methods for determination of minority carrier lifetime using an MOS-C. To accomplish this objective, the theory is presented as it exists in each respective reference, and the experiment is conducted based on the theory. Sometimes the theory is modified to include effects not considered in the original reference.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Parks, Harold G.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleComparison of methods for extracting minority carrier lifetime from MOS capacitorsen_US
dc.creatorPark, Young-bog, 1963-en_US
dc.contributor.authorPark, Young-bog, 1963-en_US
dc.date.issued1993en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe minority carrier generation lifetime is a parameter of central importance in the characterization, design, and operation of solid state devices. Various methods have been described for measuring the lifetime using an MOS capacitor (MOS-C). They can be classified according to the kind of voltage applied, the quantities measured, and the required elaboration of experimental results. This thesis discusses two groups of methods for determining the lifetime using an MOS-C: pulsed voltage methods and voltage sweep methods. The objective of this thesis is to give a comprehensive review and comparison of various methods for determination of minority carrier lifetime using an MOS-C. To accomplish this objective, the theory is presented as it exists in each respective reference, and the experiment is conducted based on the theory. Sometimes the theory is modified to include effects not considered in the original reference.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorParks, Harold G.en_US
dc.identifier.proquest1352372en_US
dc.identifier.bibrecord.b27054196en_US
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