Persistent Link:
http://hdl.handle.net/10150/278078
Title:
Electromigration characterization of aluminum thin films
Author:
Amtsfield, Joel, 1968-
Issue Date:
1992
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become a primary reliability concern. The issues concerning electromigration testing are addressed and an effective test for characterizing electromigration failures is presented. It is shown that this test is a reliable and sensitive measure for determining electromigration resistance based upon the construction of an electromigration database using this test. Lastly, the implementation of an electromigration process control test based upon the characterization is discussed.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, Ronald D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleElectromigration characterization of aluminum thin filmsen_US
dc.creatorAmtsfield, Joel, 1968-en_US
dc.contributor.authorAmtsfield, Joel, 1968-en_US
dc.date.issued1992en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractAs VLSI chip sizes and packing densities continue to escalate, electromigration failures have become a primary reliability concern. The issues concerning electromigration testing are addressed and an effective test for characterizing electromigration failures is presented. It is shown that this test is a reliable and sensitive measure for determining electromigration resistance based upon the construction of an electromigration database using this test. Lastly, the implementation of an electromigration process control test based upon the characterization is discussed.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, Ronald D.en_US
dc.identifier.proquest1347582en_US
dc.identifier.bibrecord.b27478865en_US
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