Deposition characteristics of metal contaminants from HF-based solutions onto wafer surfaces

Persistent Link:
http://hdl.handle.net/10150/278049
Title:
Deposition characteristics of metal contaminants from HF-based solutions onto wafer surfaces
Author:
Hsu, Eugene, 1966-
Issue Date:
1991
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Metal contamination levels are a growing concern in integrated circuit manufacturing because they degrade electrical performance. This work uses statistical design of experiments to determine deposition characteristics of transition and heavy metal contaminants onto silicon surfaces from process chemicals that are used in wafer cleaning. Copper, gold, molybdenum, silver, lead, chromium, tin, titanium, manganese, and tungsten were added to buffered oxide etchant (BOE or BHF) and hydrofluoric acid (HF) solutions. Wafers were immersed in these solutions and evaluated by total reflection x-ray fluoresence (TXRF) surface analysis. For those metals that are found to deposit from solution, statistical analysis is utilized to develop empirical models which describe the deposition characteristics.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Chemistry, Physical.; Engineering, Electronics and Electrical.; Physics, Electricity and Magnetism.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Parks, Harold G.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleDeposition characteristics of metal contaminants from HF-based solutions onto wafer surfacesen_US
dc.creatorHsu, Eugene, 1966-en_US
dc.contributor.authorHsu, Eugene, 1966-en_US
dc.date.issued1991en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractMetal contamination levels are a growing concern in integrated circuit manufacturing because they degrade electrical performance. This work uses statistical design of experiments to determine deposition characteristics of transition and heavy metal contaminants onto silicon surfaces from process chemicals that are used in wafer cleaning. Copper, gold, molybdenum, silver, lead, chromium, tin, titanium, manganese, and tungsten were added to buffered oxide etchant (BOE or BHF) and hydrofluoric acid (HF) solutions. Wafers were immersed in these solutions and evaluated by total reflection x-ray fluoresence (TXRF) surface analysis. For those metals that are found to deposit from solution, statistical analysis is utilized to develop empirical models which describe the deposition characteristics.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectChemistry, Physical.en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectPhysics, Electricity and Magnetism.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorParks, Harold G.en_US
dc.identifier.proquest1346721en_US
dc.identifier.bibrecord.b27252929en_US
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