Electrical trimming of diffused single crystal silicon resistors using aluminum/silicon alloying

Persistent Link:
http://hdl.handle.net/10150/277972
Title:
Electrical trimming of diffused single crystal silicon resistors using aluminum/silicon alloying
Author:
Lidke, Michael Charles, 1954-
Issue Date:
1990
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Electrical trim techniques for reducing the value of a trimmable single crystal silicon resistor (trimistor) are presented. Computer-controlled current pulses are used to incrementally decrease the value of the trimistor through metal/silicon alloying. Variations of both single and multipulse current pulses are investigated. Physical mechanisms, based on electron microscopy of trimistors trimmed under various conditions, are hypothesized to explain the observed trim behavior. Threshold currents are dependent on the initial value of the resistor, the applied current density and the trim method. The electrical trim technique for a single trimmable resistor element is optimized. The final resistance values of the trimmed trimistors are shown to be stable provided that a current at or above the threshold current is not applied thereafter. The performance of both N+ and P trim resistors is evaluated over temperature and accelerated operating life.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.; Physics, Electricity and Magnetism.; Physics, Condensed Matter.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, Ronald D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleElectrical trimming of diffused single crystal silicon resistors using aluminum/silicon alloyingen_US
dc.creatorLidke, Michael Charles, 1954-en_US
dc.contributor.authorLidke, Michael Charles, 1954-en_US
dc.date.issued1990en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractElectrical trim techniques for reducing the value of a trimmable single crystal silicon resistor (trimistor) are presented. Computer-controlled current pulses are used to incrementally decrease the value of the trimistor through metal/silicon alloying. Variations of both single and multipulse current pulses are investigated. Physical mechanisms, based on electron microscopy of trimistors trimmed under various conditions, are hypothesized to explain the observed trim behavior. Threshold currents are dependent on the initial value of the resistor, the applied current density and the trim method. The electrical trim technique for a single trimmable resistor element is optimized. The final resistance values of the trimmed trimistors are shown to be stable provided that a current at or above the threshold current is not applied thereafter. The performance of both N+ and P trim resistors is evaluated over temperature and accelerated operating life.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectPhysics, Electricity and Magnetism.en_US
dc.subjectPhysics, Condensed Matter.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, Ronald D.en_US
dc.identifier.proquest1341490en_US
dc.identifier.bibrecord.b26354664en_US
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