Characterization of the effects of radiation-induced charge on the 1/f noise properties of power DMOS transistors

Persistent Link:
http://hdl.handle.net/10150/277934
Title:
Characterization of the effects of radiation-induced charge on the 1/f noise properties of power DMOS transistors
Author:
Babcock, Jeffrey Archimedes, 1961-
Issue Date:
1991
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
This thesis investigates the effects of ionizing radiation on the noise properties of n-channel power DMOS transistors. The pre-irradiation noise power spectral density of these transistors was found to vary as 1/ flambda where lambda (the slope of the noise power spectral density when plotted on a log-log scale) ranged from approximately 0.5 to 1.0. Radiation-induced trapped charge density was found to have a large effect on the magnitude and slope of the noise. Irradiation of devices was found to produce a more uniform distribution in time constants leading to the more ideal 1/f noise power spectrum as total dose increased. Polarity of bias applied during post-radiation anneal was found to force a distribution in time constants leading to an increase in lambda for devices under negative gate bias and a decrease in lambda for devices under positive gate bias. Radiation hardness of power MOSFETs was investigated as a function of their pre-irradiation 1/f noise. No correlation was found between noise magnitude and device hardness.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleCharacterization of the effects of radiation-induced charge on the 1/f noise properties of power DMOS transistorsen_US
dc.creatorBabcock, Jeffrey Archimedes, 1961-en_US
dc.contributor.authorBabcock, Jeffrey Archimedes, 1961-en_US
dc.date.issued1991en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThis thesis investigates the effects of ionizing radiation on the noise properties of n-channel power DMOS transistors. The pre-irradiation noise power spectral density of these transistors was found to vary as 1/ flambda where lambda (the slope of the noise power spectral density when plotted on a log-log scale) ranged from approximately 0.5 to 1.0. Radiation-induced trapped charge density was found to have a large effect on the magnitude and slope of the noise. Irradiation of devices was found to produce a more uniform distribution in time constants leading to the more ideal 1/f noise power spectrum as total dose increased. Polarity of bias applied during post-radiation anneal was found to force a distribution in time constants leading to an increase in lambda for devices under negative gate bias and a decrease in lambda for devices under positive gate bias. Radiation hardness of power MOSFETs was investigated as a function of their pre-irradiation 1/f noise. No correlation was found between noise magnitude and device hardness.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.identifier.proquest1345407en_US
dc.identifier.bibrecord.b27028616en_US
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