Persistent Link:
http://hdl.handle.net/10150/277890
Title:
Gate-charge characterization of irradiated N-channel power MOSFETs
Author:
Yiin, Andy Jyhpyng, 1962-
Issue Date:
1991
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The effects of ionizing-radiation-induced oxide-trapped and interface-trapped charges on gate-charge measurements of power MOSFETs are investigated. Both radiation-hardened and commercial DMOS power transistors are tested in this study. Experimental results show that: (1) the radiation-induced interface-trapped charge is related to the changes in the plateau length, and (2) the radiation-induced charges at threshold can be directly measured from the changes in the gate-to-source charge. A new charge separation technique based on the gate-charge measurement is developed. Moreover, the radiation-induced changes in the gate-charge curve provide information on the shift in threshold voltage, the increase in the plateau length, and the effective changes in gate-to-source capacitance and charge. This information should be used by the power-supply designers to compensate for radiation-induced changes in the power-MOSFET characteristics.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, Ronald D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleGate-charge characterization of irradiated N-channel power MOSFETsen_US
dc.creatorYiin, Andy Jyhpyng, 1962-en_US
dc.contributor.authorYiin, Andy Jyhpyng, 1962-en_US
dc.date.issued1991en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe effects of ionizing-radiation-induced oxide-trapped and interface-trapped charges on gate-charge measurements of power MOSFETs are investigated. Both radiation-hardened and commercial DMOS power transistors are tested in this study. Experimental results show that: (1) the radiation-induced interface-trapped charge is related to the changes in the plateau length, and (2) the radiation-induced charges at threshold can be directly measured from the changes in the gate-to-source charge. A new charge separation technique based on the gate-charge measurement is developed. Moreover, the radiation-induced changes in the gate-charge curve provide information on the shift in threshold voltage, the increase in the plateau length, and the effective changes in gate-to-source capacitance and charge. This information should be used by the power-supply designers to compensate for radiation-induced changes in the power-MOSFET characteristics.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, Ronald D.en_US
dc.identifier.proquest1343839en_US
dc.identifier.bibrecord.b26882796en_US
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