ESD effects on the radiation response of low power vertical DMOS N-channel transistors

Persistent Link:
http://hdl.handle.net/10150/277850
Title:
ESD effects on the radiation response of low power vertical DMOS N-channel transistors
Author:
Baum, Keith Warren, 1959-
Issue Date:
1991
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The effect of non-catastrophic human body model positive electrostatic discharge pulses on the radiation response of low power VDMOS N-channel transistors is explored. The effect of multiple pulses of HBM ESD is to cause a change in threshold-voltage shifts between stressed and non-stressed devices when exposed to Co₆₀ gamma radiation. This difference is due to the build-up of a space charge region next to the Si/SiO₂ interface. This space charge region reduces the net electric field across the gate oxide when biased with a positive voltage and thus reduces the formation of holes and interface traps. Therefore, the ESD stressed devices appear to be less sensitive to radiation.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.; Engineering, Nuclear.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, R. D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleESD effects on the radiation response of low power vertical DMOS N-channel transistorsen_US
dc.creatorBaum, Keith Warren, 1959-en_US
dc.contributor.authorBaum, Keith Warren, 1959-en_US
dc.date.issued1991en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe effect of non-catastrophic human body model positive electrostatic discharge pulses on the radiation response of low power VDMOS N-channel transistors is explored. The effect of multiple pulses of HBM ESD is to cause a change in threshold-voltage shifts between stressed and non-stressed devices when exposed to Co₆₀ gamma radiation. This difference is due to the build-up of a space charge region next to the Si/SiO₂ interface. This space charge region reduces the net electric field across the gate oxide when biased with a positive voltage and thus reduces the formation of holes and interface traps. Therefore, the ESD stressed devices appear to be less sensitive to radiation.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectEngineering, Nuclear.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, R. D.en_US
dc.identifier.proquest1343680en_US
dc.identifier.bibrecord.b26843705en_US
All Items in UA Campus Repository are protected by copyright, with all rights reserved, unless otherwise indicated.