Effects of RCA cleaning upon breakdown voltages of thin gate oxides

Persistent Link:
http://hdl.handle.net/10150/277835
Title:
Effects of RCA cleaning upon breakdown voltages of thin gate oxides
Author:
Johnson, Charlene Cara, 1966-
Issue Date:
1991
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The purpose of this thesis was to investigate the effects of pre- and post-oxidation RCA cleaning on thin gate oxides through the study of breakdown voltages at several current levels. The RCA Clean consisted of SC1 (NH₄OH in H₂O₂), followed by an optional dilute HF dip, followed by SC2 (HCl in H₂O₂). SAS analysis of the experiments revealed the following results: an HF dip was not found to affect the performance of the pre-oxidation clean, SC2 was harmful to the oxide when performed after oxide growth, and the role of solution age was not clear. In addition, an interaction was found between SC1 and SC2 performed after oxide growth, with SC1 partially alleviating the harmful effects of SC2 when performed prior to SC2. This and other data led to the conclusion that SC2 was selectively etching the oxide.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Prince, John L.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleEffects of RCA cleaning upon breakdown voltages of thin gate oxidesen_US
dc.creatorJohnson, Charlene Cara, 1966-en_US
dc.contributor.authorJohnson, Charlene Cara, 1966-en_US
dc.date.issued1991en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe purpose of this thesis was to investigate the effects of pre- and post-oxidation RCA cleaning on thin gate oxides through the study of breakdown voltages at several current levels. The RCA Clean consisted of SC1 (NH₄OH in H₂O₂), followed by an optional dilute HF dip, followed by SC2 (HCl in H₂O₂). SAS analysis of the experiments revealed the following results: an HF dip was not found to affect the performance of the pre-oxidation clean, SC2 was harmful to the oxide when performed after oxide growth, and the role of solution age was not clear. In addition, an interaction was found between SC1 and SC2 performed after oxide growth, with SC1 partially alleviating the harmful effects of SC2 when performed prior to SC2. This and other data led to the conclusion that SC2 was selectively etching the oxide.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorPrince, John L.en_US
dc.identifier.proquest1343412en_US
dc.identifier.bibrecord.b26727717en_US
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