Analysis of techniques to separate the ionizing-radiation-induced charge components in irradiated MOSFETs

Persistent Link:
http://hdl.handle.net/10150/277832
Title:
Analysis of techniques to separate the ionizing-radiation-induced charge components in irradiated MOSFETs
Author:
Weber, William Martin, 1966-
Issue Date:
1990
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Power Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) are widely used in power supplies for spaceborne electronic systems. Spacecraft are routinely subjected to ionizing radiation. Ionizing-radiation-induced charges alter the operation of the MOSFET. The mid-gap technique allows separation of the parameter shifts into components due to oxide trapped charge and interface trapped charge. However, non-linearity in the subthreshold curve results in an approximately 20% underestimation of the interface component of the threshold shift. A new characterization technique is presented based on the relation between gate charge and gate-source voltage. The results obtained using the gate-charge method agree with theoretical calculations.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, Ronald D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleAnalysis of techniques to separate the ionizing-radiation-induced charge components in irradiated MOSFETsen_US
dc.creatorWeber, William Martin, 1966-en_US
dc.contributor.authorWeber, William Martin, 1966-en_US
dc.date.issued1990en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractPower Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) are widely used in power supplies for spaceborne electronic systems. Spacecraft are routinely subjected to ionizing radiation. Ionizing-radiation-induced charges alter the operation of the MOSFET. The mid-gap technique allows separation of the parameter shifts into components due to oxide trapped charge and interface trapped charge. However, non-linearity in the subthreshold curve results in an approximately 20% underestimation of the interface component of the threshold shift. A new characterization technique is presented based on the relation between gate charge and gate-source voltage. The results obtained using the gate-charge method agree with theoretical calculations.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, Ronald D.en_US
dc.identifier.proquest1342996en_US
dc.identifier.bibrecord.b26624035en_US
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