The electrostatic nature of contaminative particles in a semiconductor processing plasma

Persistent Link:
http://hdl.handle.net/10150/277802
Title:
The electrostatic nature of contaminative particles in a semiconductor processing plasma
Author:
Nowlin, Robert Nathaniel, 1966-
Issue Date:
1990
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Two models are presented to describe the immediate environment surrounding negatively charged contaminants in an idealized plasma. The first model uses Poisson's equation to determine the contaminant charge and voltage. This model predicts a critical radius of 40 microns or less below which Poisson's equation is no longer valid. For contaminant radii less than 40 microns, the Coulomb potential is used to find the contaminant charge and voltage. Both models predict negative charges on the order of 10-14 Coulombs, and voltages on the same order of magnitude as the electron energy.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.; Physics, Fluid and Plasma.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Carlile, Robert N.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleThe electrostatic nature of contaminative particles in a semiconductor processing plasmaen_US
dc.creatorNowlin, Robert Nathaniel, 1966-en_US
dc.contributor.authorNowlin, Robert Nathaniel, 1966-en_US
dc.date.issued1990en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractTwo models are presented to describe the immediate environment surrounding negatively charged contaminants in an idealized plasma. The first model uses Poisson's equation to determine the contaminant charge and voltage. This model predicts a critical radius of 40 microns or less below which Poisson's equation is no longer valid. For contaminant radii less than 40 microns, the Coulomb potential is used to find the contaminant charge and voltage. Both models predict negative charges on the order of 10-14 Coulombs, and voltages on the same order of magnitude as the electron energy.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectPhysics, Fluid and Plasma.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCarlile, Robert N.en_US
dc.identifier.proquest1342981en_US
dc.identifier.bibrecord.b26622786en_US
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