Features of a heavy-ion-generated-current filament used in modeling single-event burnout of power MOSFETs

Persistent Link:
http://hdl.handle.net/10150/277796
Title:
Features of a heavy-ion-generated-current filament used in modeling single-event burnout of power MOSFETs
Author:
Johnson, Gregory Howard, 1965-
Issue Date:
1990
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Power MOSFETs are often required to operate in a space radiation environment; therefore, they are susceptible to a catastrophic failure mode called single-event burnout. Single-event burnout of power MOSFETs is initiated by the passage of an energetic-heavy ion through the parasitic BJT inherent to the power-MOSFET structure. The electron-hole pairs generated by the ion support a short-lived current source which imposes a base-emitter voltage on the parasitic BJT. If a sufficient base-emitter voltage is imposed, the parasitic BJT enters second breakdown and burnout of the MOSFET occurs. A semi-analytical model has been developed to predict the energy required of the incident ion to initiate burnout. This thesis addresses the portion of this model which relates the energy of the incident ion to the base-emitter voltage imposed on the parasitic BJT. The initial base-emitter potential is determined using image-source techniques.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.; Physics, Electricity and Magnetism.; Physics, Radiation.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Hohl, Jakob

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleFeatures of a heavy-ion-generated-current filament used in modeling single-event burnout of power MOSFETsen_US
dc.creatorJohnson, Gregory Howard, 1965-en_US
dc.contributor.authorJohnson, Gregory Howard, 1965-en_US
dc.date.issued1990en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractPower MOSFETs are often required to operate in a space radiation environment; therefore, they are susceptible to a catastrophic failure mode called single-event burnout. Single-event burnout of power MOSFETs is initiated by the passage of an energetic-heavy ion through the parasitic BJT inherent to the power-MOSFET structure. The electron-hole pairs generated by the ion support a short-lived current source which imposes a base-emitter voltage on the parasitic BJT. If a sufficient base-emitter voltage is imposed, the parasitic BJT enters second breakdown and burnout of the MOSFET occurs. A semi-analytical model has been developed to predict the energy required of the incident ion to initiate burnout. This thesis addresses the portion of this model which relates the energy of the incident ion to the base-emitter voltage imposed on the parasitic BJT. The initial base-emitter potential is determined using image-source techniques.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectPhysics, Electricity and Magnetism.en_US
dc.subjectPhysics, Radiation.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorHohl, Jakoben_US
dc.identifier.proquest1342972en_US
dc.identifier.bibrecord.b26622464en_US
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