Simulation, design, fabrication, and application of an electrostatic-discharge detector using a floating-gate transistor

Persistent Link:
http://hdl.handle.net/10150/277299
Title:
Simulation, design, fabrication, and application of an electrostatic-discharge detector using a floating-gate transistor
Author:
Lendenmann, Heinz, 1962-
Issue Date:
1990
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Electro-Static Discharge (ESD) problems in the semiconductor industry are exacerbated by the lack of information about the magnitudes of these events and their locations. This thesis describes an integrated device, similar in structure to an EEP-ROM cell, capable of measuring the magnitudes and polarities of electrostatic discharges. A quantitative formulation of the transfer characteristic of the device as a function of the design parameters and the subsequent layout, manufacturing and evaluation of this detector was obtained. A chip was fabricated which included experiments to test the presented mathematical model and its extensive range of sensitivity, as well as several structures to evaluate the use of this detector in industrial environments. Extensive use of computers helped in the process design and in the simulation of the non-linear model for the operation.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Engineering, Electronics and Electrical.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, R.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleSimulation, design, fabrication, and application of an electrostatic-discharge detector using a floating-gate transistoren_US
dc.creatorLendenmann, Heinz, 1962-en_US
dc.contributor.authorLendenmann, Heinz, 1962-en_US
dc.date.issued1990en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractElectro-Static Discharge (ESD) problems in the semiconductor industry are exacerbated by the lack of information about the magnitudes of these events and their locations. This thesis describes an integrated device, similar in structure to an EEP-ROM cell, capable of measuring the magnitudes and polarities of electrostatic discharges. A quantitative formulation of the transfer characteristic of the device as a function of the design parameters and the subsequent layout, manufacturing and evaluation of this detector was obtained. A chip was fabricated which included experiments to test the presented mathematical model and its extensive range of sensitivity, as well as several structures to evaluate the use of this detector in industrial environments. Extensive use of computers helped in the process design and in the simulation of the non-linear model for the operation.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectEngineering, Electronics and Electrical.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, R.en_US
dc.identifier.proquest1340291en_US
dc.identifier.bibrecord.b26252570en_US
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