Impedance determination of a RF plasma discharge by external measurements

Persistent Link:
http://hdl.handle.net/10150/277141
Title:
Impedance determination of a RF plasma discharge by external measurements
Author:
Krautschik, Christof Gabriel, 1957-
Issue Date:
1989
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The equivalent impedance of a RF plasma was experimentally determined by monitoring the voltage and current waveform for different input powers in real time. Average ion energies and fluxes were determined by a computer model which takes ion collisions in the sheath regions into account. In addition two models were proposed which explain how RF energy is converted to DC potential energy in the sheath. Etch rates of Si in a CF₄ discharge were also evaluated and related to the measurements.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Semiconductors -- Etching.; Plasma etching.; Impedance (Electricity) -- Measurement.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Carlile, Robert N.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleImpedance determination of a RF plasma discharge by external measurementsen_US
dc.creatorKrautschik, Christof Gabriel, 1957-en_US
dc.contributor.authorKrautschik, Christof Gabriel, 1957-en_US
dc.date.issued1989en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe equivalent impedance of a RF plasma was experimentally determined by monitoring the voltage and current waveform for different input powers in real time. Average ion energies and fluxes were determined by a computer model which takes ion collisions in the sheath regions into account. In addition two models were proposed which explain how RF energy is converted to DC potential energy in the sheath. Etch rates of Si in a CF₄ discharge were also evaluated and related to the measurements.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectSemiconductors -- Etching.en_US
dc.subjectPlasma etching.en_US
dc.subjectImpedance (Electricity) -- Measurement.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCarlile, Robert N.en_US
dc.identifier.proquest1338839en_US
dc.identifier.oclc24021956en_US
dc.identifier.bibrecord.b17721076en_US
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