Two-dimensional device simulation of junction termination structures for determination of breakdown behavior

Persistent Link:
http://hdl.handle.net/10150/277067
Title:
Two-dimensional device simulation of junction termination structures for determination of breakdown behavior
Author:
Tan, Leong Hin, 1957-
Issue Date:
1989
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
In this work, we have investigated numerical techniques to determine the breakdown behavior of complex semiconductor devices using two-dimensional simulation. In particular, we have augmented the device simulator SEPSIP with a capability for handling single and multiple floating field rings, and for handling devices with slanted edges. We have furthermore improved the grid width selection algorithm in SEPSIP. A capability for plotting equi-field contours was added to the code. Finally, all system dependencies were removed from the SEPSIP code, and a new version of SEPSIP (Version 2.0) was generated which can be executed on any PC/XT, PC/AT, or PC/386 compatible computer. This eliminates the need for transfering files back and forth between the PC, which had formerly been used as an I/O processor, and the VAX, which was used for numerically intensive computations. It also makes the code more accessible to scientists and engineers who are working in this important research area.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Breakdown (Electricity); Semiconductors -- Computer simulation.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Cellier, Francois E.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleTwo-dimensional device simulation of junction termination structures for determination of breakdown behavioren_US
dc.creatorTan, Leong Hin, 1957-en_US
dc.contributor.authorTan, Leong Hin, 1957-en_US
dc.date.issued1989en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractIn this work, we have investigated numerical techniques to determine the breakdown behavior of complex semiconductor devices using two-dimensional simulation. In particular, we have augmented the device simulator SEPSIP with a capability for handling single and multiple floating field rings, and for handling devices with slanted edges. We have furthermore improved the grid width selection algorithm in SEPSIP. A capability for plotting equi-field contours was added to the code. Finally, all system dependencies were removed from the SEPSIP code, and a new version of SEPSIP (Version 2.0) was generated which can be executed on any PC/XT, PC/AT, or PC/386 compatible computer. This eliminates the need for transfering files back and forth between the PC, which had formerly been used as an I/O processor, and the VAX, which was used for numerically intensive computations. It also makes the code more accessible to scientists and engineers who are working in this important research area.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectBreakdown (Electricity)en_US
dc.subjectSemiconductors -- Computer simulation.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCellier, Francois E.en_US
dc.identifier.proquest1337491en_US
dc.identifier.oclc23112487en_US
dc.identifier.bibrecord.b17571133en_US
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