Two-dimensional simulation of the effects of total dose ionizing radiation on power-MOSFET breakdown

Persistent Link:
http://hdl.handle.net/10150/277053
Title:
Two-dimensional simulation of the effects of total dose ionizing radiation on power-MOSFET breakdown
Author:
Davis, Kenneth Ralph, 1964-
Issue Date:
1989
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The effects of ionizing radiation on the breakdown-voltage degradation of power-MOSFET termination structures were examined through two-dimensional simulation. A wide variety of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results were compared with measurements made on selected structures. The principal ionizing radiation damaging mechanisms in MOS devices are discussed. Modifications made to an existing simulation program in order to simulate these complex field ring and field plate structures are described. Background information into how these termination structures improve the breakdown voltage and their sensitivities to positive interface charge buildup is investigated.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Metal oxide semiconductor field-effect transistors -- Computer simulation.; Extraterrestrial radiation.; Materials -- Effect of space environment on.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Cellier, Francois E.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleTwo-dimensional simulation of the effects of total dose ionizing radiation on power-MOSFET breakdownen_US
dc.creatorDavis, Kenneth Ralph, 1964-en_US
dc.contributor.authorDavis, Kenneth Ralph, 1964-en_US
dc.date.issued1989en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe effects of ionizing radiation on the breakdown-voltage degradation of power-MOSFET termination structures were examined through two-dimensional simulation. A wide variety of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results were compared with measurements made on selected structures. The principal ionizing radiation damaging mechanisms in MOS devices are discussed. Modifications made to an existing simulation program in order to simulate these complex field ring and field plate structures are described. Background information into how these termination structures improve the breakdown voltage and their sensitivities to positive interface charge buildup is investigated.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectMetal oxide semiconductor field-effect transistors -- Computer simulation.en_US
dc.subjectExtraterrestrial radiation.en_US
dc.subjectMaterials -- Effect of space environment on.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCellier, Francois E.en_US
dc.identifier.proquest1337472en_US
dc.identifier.oclc22915176en_US
dc.identifier.bibrecord.b17534136en_US
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