Persistent Link:
http://hdl.handle.net/10150/277047
Title:
Modification of Schottky diode performance due to ion bombardment
Author:
Arnold, John Christopher, 1964-
Issue Date:
1989
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
An experimental and theoretical analysis of the effects of ion bombardment on Schottky diodes is presented. The experimentally observed shifts in diode performance are compared to the conditions of ion exposure. These experiments show that Schottky diodes exposed to ion beams show decreases in effective barrier heights and ideality factors, as well as increased incidence of premature reverse breakdown. The change in barrier height is found to be proportional to the energy of the individual ions and the total number of ions delivered to the surface. A numerical simulation of the damage process and device performance is developed. The model considers only the effect of ion exposure on the potential distribution within the metal-semiconductor junction. Comparison of experimental and modelled barrier shifts shows fair agreement, suggesting that enhancement of tunnelling currents is the dominant mechanism for barrier lowering.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Diodes, Schottky-barrier.; Ion bombardment.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Carlile, R. N.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleModification of Schottky diode performance due to ion bombardmenten_US
dc.creatorArnold, John Christopher, 1964-en_US
dc.contributor.authorArnold, John Christopher, 1964-en_US
dc.date.issued1989en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractAn experimental and theoretical analysis of the effects of ion bombardment on Schottky diodes is presented. The experimentally observed shifts in diode performance are compared to the conditions of ion exposure. These experiments show that Schottky diodes exposed to ion beams show decreases in effective barrier heights and ideality factors, as well as increased incidence of premature reverse breakdown. The change in barrier height is found to be proportional to the energy of the individual ions and the total number of ions delivered to the surface. A numerical simulation of the damage process and device performance is developed. The model considers only the effect of ion exposure on the potential distribution within the metal-semiconductor junction. Comparison of experimental and modelled barrier shifts shows fair agreement, suggesting that enhancement of tunnelling currents is the dominant mechanism for barrier lowering.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectDiodes, Schottky-barrier.en_US
dc.subjectIon bombardment.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCarlile, R. N.en_US
dc.identifier.proquest1337467en_US
dc.identifier.oclc23103384en_US
dc.identifier.bibrecord.b17570359en_US
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