Persistent Link:
http://hdl.handle.net/10150/277011
Title:
Fast-neutron-induced resistivity change in power MOSFETs
Author:
Safarjameh, Kourosh, 1961-
Issue Date:
1989
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Fast neutron irradiation tests were performed to determine the correlation of change of drain-source resistance and neutron fluence for power MOSFETs. The Objectives of the tests were: (1) to detect and measure the degradation of critical MOSFET device parameters as a function of neutron fluence (2) to compare the experimental results and the theoretical model. In general, the drain-source resistance increased from 1 Ohm to 100 Ohm after exposure to fast neutron fluence of 3 x 1014 neut/cm2, and decreased by a factor of five after high temperature annealing.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Metal oxide semiconductor field-effect transistors -- Effect of radiation on.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Nuclear and Energy Engineering
Degree Grantor:
University of Arizona
Advisor:
Nelson, George M.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleFast-neutron-induced resistivity change in power MOSFETsen_US
dc.creatorSafarjameh, Kourosh, 1961-en_US
dc.contributor.authorSafarjameh, Kourosh, 1961-en_US
dc.date.issued1989en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractFast neutron irradiation tests were performed to determine the correlation of change of drain-source resistance and neutron fluence for power MOSFETs. The Objectives of the tests were: (1) to detect and measure the degradation of critical MOSFET device parameters as a function of neutron fluence (2) to compare the experimental results and the theoretical model. In general, the drain-source resistance increased from 1 Ohm to 100 Ohm after exposure to fast neutron fluence of 3 x 1014 neut/cm2, and decreased by a factor of five after high temperature annealing.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectMetal oxide semiconductor field-effect transistors -- Effect of radiation on.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineNuclear and Energy Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorNelson, George M.en_US
dc.identifier.proquest1336900en_US
dc.identifier.oclc22748028en_US
dc.identifier.bibrecord.b17494734en_US
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