The analysis of current-mirror MOSFETs for use in radiation environments

Persistent Link:
http://hdl.handle.net/10150/276910
Title:
The analysis of current-mirror MOSFETs for use in radiation environments
Author:
Martinez, Marino Juan, 1965-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Experiments were conducted on current-mirror MOSFETs to examine their suitability for use in radiation environments. These devices, which allow low loss load current sensing (defined by a current-ratio n'), are an important element of many power integrated circuits (PICs). Total-dose testing demonstrated that the current ratio was virtually unaffected for many operating conditions. In all cases, changes were largest when sense resistance was largest and minimal when sense voltage was approximately equal to the load source's voltage. In addition, testing verified the feasibility of using sense-cell MOSFETs for applications which require radiation exposure. A constant-current op-amp circuit showed minimal current shifts, using proper circuit design, following total-dose exposure. Dose-rate testing showed the feasibility of using sense voltage to trigger g&d2; protection through drain-source voltage clamping, providing a relatively inexpensive alternative to voltage derating.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Metal oxide semiconductor field-effect transistors.; Extraterrestrial radiation.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleThe analysis of current-mirror MOSFETs for use in radiation environmentsen_US
dc.creatorMartinez, Marino Juan, 1965-en_US
dc.contributor.authorMartinez, Marino Juan, 1965-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractExperiments were conducted on current-mirror MOSFETs to examine their suitability for use in radiation environments. These devices, which allow low loss load current sensing (defined by a current-ratio n'), are an important element of many power integrated circuits (PICs). Total-dose testing demonstrated that the current ratio was virtually unaffected for many operating conditions. In all cases, changes were largest when sense resistance was largest and minimal when sense voltage was approximately equal to the load source's voltage. In addition, testing verified the feasibility of using sense-cell MOSFETs for applications which require radiation exposure. A constant-current op-amp circuit showed minimal current shifts, using proper circuit design, following total-dose exposure. Dose-rate testing showed the feasibility of using sense voltage to trigger g&d2; protection through drain-source voltage clamping, providing a relatively inexpensive alternative to voltage derating.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectMetal oxide semiconductor field-effect transistors.en_US
dc.subjectExtraterrestrial radiation.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.identifier.proquest1335833en_US
dc.identifier.oclc22246778en_US
dc.identifier.bibrecord.b17387413en_US
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