Characterization and design of the complementary JFET LAMBDA-DIODE SRAM

Persistent Link:
http://hdl.handle.net/10150/276882
Title:
Characterization and design of the complementary JFET LAMBDA-DIODE SRAM
Author:
Song, Shiunn Luen Steven, 1960-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption and chip area of this circuit compared with the JFET CROSS COUPLED SRAM by using SPICE and breadboard simulation techniques. The results show positive signs of the Λ-DIODE's feasibility for use in VLSI static memory circuits from the chip area aspect if the parasitic capacitance of the JFET device could be minimized to reduce the power delay product.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Junction transistors.; Field-effect transistors.; Integrated circuits -- Design.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, Ronald D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleCharacterization and design of the complementary JFET LAMBDA-DIODE SRAMen_US
dc.creatorSong, Shiunn Luen Steven, 1960-en_US
dc.contributor.authorSong, Shiunn Luen Steven, 1960-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption and chip area of this circuit compared with the JFET CROSS COUPLED SRAM by using SPICE and breadboard simulation techniques. The results show positive signs of the Λ-DIODE's feasibility for use in VLSI static memory circuits from the chip area aspect if the parasitic capacitance of the JFET device could be minimized to reduce the power delay product.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectJunction transistors.en_US
dc.subjectField-effect transistors.en_US
dc.subjectIntegrated circuits -- Design.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, Ronald D.en_US
dc.identifier.proquest1335701en_US
dc.identifier.oclc22499577en_US
dc.identifier.bibrecord.b17444457en_US
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