Characterization of interface trap density in power MOSFETs using noise measurements

Persistent Link:
http://hdl.handle.net/10150/276872
Title:
Characterization of interface trap density in power MOSFETs using noise measurements
Author:
Huang, Chender, 1960-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Low-frequency noise has been measured on commercial power MOSFETs. These devices, fabricated with the VDMOS structure, exhibit a 1/f type noise spectrum. The interface state density obtained from noise measurements was compared with that obtained from the subthreshold-slope method. Reasonable agreement was found between the two measurements. The radiation effects on the noise power spectral density were also investigated. The results indicated that the noise can be attributed to the generation of interface traps near the Si-SiO₂ interface. The level of interface traps generated by radiation was bias dependent. The positive gate bias gave rise to the largest interface-trap density.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Metal oxide semiconductor field-effect transistors -- Noise.; Power semiconductors -- Noise.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, Ron. D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleCharacterization of interface trap density in power MOSFETs using noise measurementsen_US
dc.creatorHuang, Chender, 1960-en_US
dc.contributor.authorHuang, Chender, 1960-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractLow-frequency noise has been measured on commercial power MOSFETs. These devices, fabricated with the VDMOS structure, exhibit a 1/f type noise spectrum. The interface state density obtained from noise measurements was compared with that obtained from the subthreshold-slope method. Reasonable agreement was found between the two measurements. The radiation effects on the noise power spectral density were also investigated. The results indicated that the noise can be attributed to the generation of interface traps near the Si-SiO₂ interface. The level of interface traps generated by radiation was bias dependent. The positive gate bias gave rise to the largest interface-trap density.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectMetal oxide semiconductor field-effect transistors -- Noise.en_US
dc.subjectPower semiconductors -- Noise.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, Ron. D.en_US
dc.identifier.proquest1335691en_US
dc.identifier.oclc22470618en_US
dc.identifier.bibrecord.b17436837en_US
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