One dimensional theoretical and experimental analysis of the dark current in an indium-antimide hybrid photovoltaic focal plane array

Persistent Link:
http://hdl.handle.net/10150/276861
Title:
One dimensional theoretical and experimental analysis of the dark current in an indium-antimide hybrid photovoltaic focal plane array
Author:
Chen, Hao, 1958-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
A one-dimensional analytical model of dark current has been developed to facilitate the investigation and analysis of dark current from gate-controlled photovoltaic InSb arrays. The applied gate voltage is an essential parameter in the model. The expressions relating this parameter to surface potential are derived separately for the cases of accumulation and depletion at the surface of n-type InSb material under the gate. In addition, the measured dark current is compared with that from the analytical model, and the discrepancy is discussed in terms of the intrinsic carrier concentration, surface recombination velocity, and geometry of the array. The components of dark current are mainly associated with surface state generation-recombination, field induced tunneling, and the depletion region from the bulk and surface. The experimental results are obtained at temperatures between 30K and 40K.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Photovoltaic cells.; Indium antimonide crystals.; Electric currents -- Measurement.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, R. D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleOne dimensional theoretical and experimental analysis of the dark current in an indium-antimide hybrid photovoltaic focal plane arrayen_US
dc.creatorChen, Hao, 1958-en_US
dc.contributor.authorChen, Hao, 1958-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractA one-dimensional analytical model of dark current has been developed to facilitate the investigation and analysis of dark current from gate-controlled photovoltaic InSb arrays. The applied gate voltage is an essential parameter in the model. The expressions relating this parameter to surface potential are derived separately for the cases of accumulation and depletion at the surface of n-type InSb material under the gate. In addition, the measured dark current is compared with that from the analytical model, and the discrepancy is discussed in terms of the intrinsic carrier concentration, surface recombination velocity, and geometry of the array. The components of dark current are mainly associated with surface state generation-recombination, field induced tunneling, and the depletion region from the bulk and surface. The experimental results are obtained at temperatures between 30K and 40K.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectPhotovoltaic cells.en_US
dc.subjectIndium antimonide crystals.en_US
dc.subjectElectric currents -- Measurement.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, R. D.en_US
dc.identifier.proquest1335673en_US
dc.identifier.oclc22470613en_US
dc.identifier.bibrecord.b17436813en_US
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