Persistent Link:
http://hdl.handle.net/10150/276807
Title:
Scanning tunneling microscopy of layered structure semiconductors
Author:
Henson, Tammy Deanne, 1964-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Semiconductors are characterized by atomic resolution imaging and density of states measurements (DOS) obtained through the use of a scanning tunneling microscope (STM). The DOS of the conduction and valence bands can be measured separately with a STM as opposed to an optical measurement which measures only the joint DOS. Layered-structure semiconductors are characterized both in the bulk form and in the isolated cluster form. Images of three bulk layered-structure semiconductors, MoS₂, WSe₂, and SnS₂, were obtained with both positive and negative sample-to-tip bias voltages. Curves of tunneling current as a function of bias voltage were measured, from which the DOS of the valence and conduction bands can be inferred. We obtained an atomically resolved image of an isolated fragment of a semi-conductor cluster which was deposited on a graphite surface from a colloidal suspension of BiI₃. Also imaged were clusters of MoS₂ layered-structure semiconductors.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Scanning tunneling microscopy.; Layer structure (Solids); Semiconductors.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Optical Sciences
Degree Grantor:
University of Arizona
Advisor:
Sarid, Dror

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleScanning tunneling microscopy of layered structure semiconductorsen_US
dc.creatorHenson, Tammy Deanne, 1964-en_US
dc.contributor.authorHenson, Tammy Deanne, 1964-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractSemiconductors are characterized by atomic resolution imaging and density of states measurements (DOS) obtained through the use of a scanning tunneling microscope (STM). The DOS of the conduction and valence bands can be measured separately with a STM as opposed to an optical measurement which measures only the joint DOS. Layered-structure semiconductors are characterized both in the bulk form and in the isolated cluster form. Images of three bulk layered-structure semiconductors, MoS₂, WSe₂, and SnS₂, were obtained with both positive and negative sample-to-tip bias voltages. Curves of tunneling current as a function of bias voltage were measured, from which the DOS of the valence and conduction bands can be inferred. We obtained an atomically resolved image of an isolated fragment of a semi-conductor cluster which was deposited on a graphite surface from a colloidal suspension of BiI₃. Also imaged were clusters of MoS₂ layered-structure semiconductors.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectScanning tunneling microscopy.en_US
dc.subjectLayer structure (Solids)en_US
dc.subjectSemiconductors.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSarid, Droren_US
dc.identifier.proquest1335052en_US
dc.identifier.oclc21728740en_US
dc.identifier.bibrecord.b17301300en_US
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