Simulation of polymer-deposition controlled trench etching in silicon

Persistent Link:
http://hdl.handle.net/10150/276803
Title:
Simulation of polymer-deposition controlled trench etching in silicon
Author:
Sun, Chin-Yang, 1957-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Reactive ion etching has been used to obtain anisotropic silicon trenches with small sidewall angles. This work demonstrates that the sidewall angle can be controlled by the wafer temperature and there exists an Arrhenius-type relationship among isotropic polymer deposition rate, thickness of polymer, and sidewall angle.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Semiconductors -- Etching -- Simulation methods.; Integrated circuits -- Design -- Simulation methods.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical & Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Carlile, Robert N.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleSimulation of polymer-deposition controlled trench etching in siliconen_US
dc.creatorSun, Chin-Yang, 1957-en_US
dc.contributor.authorSun, Chin-Yang, 1957-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractReactive ion etching has been used to obtain anisotropic silicon trenches with small sidewall angles. This work demonstrates that the sidewall angle can be controlled by the wafer temperature and there exists an Arrhenius-type relationship among isotropic polymer deposition rate, thickness of polymer, and sidewall angle.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectSemiconductors -- Etching -- Simulation methods.en_US
dc.subjectIntegrated circuits -- Design -- Simulation methods.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical & Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCarlile, Robert N.en_US
dc.identifier.proquest1334364en_US
dc.identifier.oclc22271730en_US
dc.identifier.bibrecord.b17390539en_US
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