Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS

Persistent Link:
http://hdl.handle.net/10150/276801
Title:
Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS
Author:
Shelley, Valerie Anderson, 1957-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigated. The effects considered are Drain Induced Barrier Lowering, DIBL, and the maximum electric field, Emax, which influences Drain Induced High Field, DIHF. A scaled short channel design is used as the basis for the investigation. Cases are numerically simulated using the MINIMOS program. DIBL and Emax are calculated using the Jain and Balk model. Model values are compared to numerical simulation values. Results show the model consistently overestimates DIBL. Also, the range for which the model closely estimates Emax is found. Variation in Emax with change of junction depth Xj is investigated. The electric field, Ex, as it varies with depth in the channel is investigated, and compared to the Jain and Balk approximation. The deviations suggest that the model must break down for short channels.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Metal oxide semiconductor field-effect transistors.; Metal oxide semiconductors -- Mathematical models.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, Ron D.; Hohl, Jakob H.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleValidity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETSen_US
dc.creatorShelley, Valerie Anderson, 1957-en_US
dc.contributor.authorShelley, Valerie Anderson, 1957-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigated. The effects considered are Drain Induced Barrier Lowering, DIBL, and the maximum electric field, Emax, which influences Drain Induced High Field, DIHF. A scaled short channel design is used as the basis for the investigation. Cases are numerically simulated using the MINIMOS program. DIBL and Emax are calculated using the Jain and Balk model. Model values are compared to numerical simulation values. Results show the model consistently overestimates DIBL. Also, the range for which the model closely estimates Emax is found. Variation in Emax with change of junction depth Xj is investigated. The electric field, Ex, as it varies with depth in the channel is investigated, and compared to the Jain and Balk approximation. The deviations suggest that the model must break down for short channels.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectMetal oxide semiconductor field-effect transistors.en_US
dc.subjectMetal oxide semiconductors -- Mathematical models.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, Ron D.en_US
dc.contributor.advisorHohl, Jakob H.en_US
dc.identifier.proquest1334361en_US
dc.identifier.oclc21889332en_US
dc.identifier.bibrecord.b17320811en_US
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