Persistent Link:
http://hdl.handle.net/10150/276768
Title:
Etching in silicon-dioxide with a controllable sidewall angle
Author:
Houghten, Jonathan Lester, 1964-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
A selective sloped silicon dioxide etching method has been studied using a temperature controlled diode-type reactive ion etch system with CHCl₃, C₂F₆, H₂ and N₂ gases. The SiO₂ was covered by a polyimide mask with vertical sidewalls and window openings from 1.25-4 microns. Control of the sidewall slope in SiO₂ is possible through varying the ratios of CHCl₃ and C₂F₆. High percentages (95-100%) of CHCl₃ resulted in low etch rates of 420 angstroms/min. Large slopes of up to 65 degrees are possible. With C₂F₆ above 5%, larger etch rates close to 2000 angstroms/min. occur and etching becomes vertical with purely anisotropic profiles at 10% C₂F₆. In a simulation study, SiO₂ sidewall slope was found to be controlled by the isotropic deposition rate as well as the anisotropic etch rate. Optical Multichannel Analysis of the discharge showed an increase in silicon dioxide removal when the percentage of C₂F₆ was increased. (Abstract shortened with permission of author.)
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Semiconductors -- Etching.; Silica.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical & Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Carlile, Robert N.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleEtching in silicon-dioxide with a controllable sidewall angleen_US
dc.creatorHoughten, Jonathan Lester, 1964-en_US
dc.contributor.authorHoughten, Jonathan Lester, 1964-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractA selective sloped silicon dioxide etching method has been studied using a temperature controlled diode-type reactive ion etch system with CHCl₃, C₂F₆, H₂ and N₂ gases. The SiO₂ was covered by a polyimide mask with vertical sidewalls and window openings from 1.25-4 microns. Control of the sidewall slope in SiO₂ is possible through varying the ratios of CHCl₃ and C₂F₆. High percentages (95-100%) of CHCl₃ resulted in low etch rates of 420 angstroms/min. Large slopes of up to 65 degrees are possible. With C₂F₆ above 5%, larger etch rates close to 2000 angstroms/min. occur and etching becomes vertical with purely anisotropic profiles at 10% C₂F₆. In a simulation study, SiO₂ sidewall slope was found to be controlled by the isotropic deposition rate as well as the anisotropic etch rate. Optical Multichannel Analysis of the discharge showed an increase in silicon dioxide removal when the percentage of C₂F₆ was increased. (Abstract shortened with permission of author.)en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectSemiconductors -- Etching.en_US
dc.subjectSilica.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical & Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCarlile, Robert N.en_US
dc.identifier.proquest1334299en_US
dc.identifier.oclc21181446en_US
dc.identifier.bibrecord.b17180041en_US
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