Fabrication and modeling of a floating-gate transistor for use as an electrostatic-discharge detector

Persistent Link:
http://hdl.handle.net/10150/276727
Title:
Fabrication and modeling of a floating-gate transistor for use as an electrostatic-discharge detector
Author:
Hsueh, Weichung Paul, 1962-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Electrostatic discharge is of great concern to the electronics industry. It degrades and destroys large numbers of integrated circuits at every step from fabrication through packaging and testing. The goal of this research effort was the development of a device that can be used to obtain quantitative information on electrostatic discharge (ESD) in the integrated-circuit workplace. The device that was developed can be utilized in two different modes. (1) It can be used to form ESD test wafers or test chips. (2) It can be incorporated on product chips to give the ESD history of devices or monitor the process line. The technology that was examined in this work was that for floating-gate PROMS. A simple analytical model for obtaining a parameter called the ESD factor was developed. The prototype detector was designed, fabricated and tested in the Semiconductor Processing Facility of the University of Arizona. Evidence will be presented that the FLOTOX type of EEPROM functions well in its application as an ESD detector.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Electric discharges -- Measurement.; Electrostatics -- Measurement.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Schrimpf, Ron D.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleFabrication and modeling of a floating-gate transistor for use as an electrostatic-discharge detectoren_US
dc.creatorHsueh, Weichung Paul, 1962-en_US
dc.contributor.authorHsueh, Weichung Paul, 1962-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractElectrostatic discharge is of great concern to the electronics industry. It degrades and destroys large numbers of integrated circuits at every step from fabrication through packaging and testing. The goal of this research effort was the development of a device that can be used to obtain quantitative information on electrostatic discharge (ESD) in the integrated-circuit workplace. The device that was developed can be utilized in two different modes. (1) It can be used to form ESD test wafers or test chips. (2) It can be incorporated on product chips to give the ESD history of devices or monitor the process line. The technology that was examined in this work was that for floating-gate PROMS. A simple analytical model for obtaining a parameter called the ESD factor was developed. The prototype detector was designed, fabricated and tested in the Semiconductor Processing Facility of the University of Arizona. Evidence will be presented that the FLOTOX type of EEPROM functions well in its application as an ESD detector.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectElectric discharges -- Measurement.en_US
dc.subjectElectrostatics -- Measurement.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSchrimpf, Ron D.en_US
dc.identifier.proquest1333599en_US
dc.identifier.oclc20980582en_US
dc.identifier.bibrecord.b17130505en_US
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