Persistent Link:
http://hdl.handle.net/10150/276695
Title:
Two-dimensional simulation of power MOSFET near breakdown
Author:
Yen, Chi-min, 1949-
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
A simulation program has been developed to facilitate the investigation and analysis of power semiconductor devices under the reverse-bias condition. The electrostatic potential distribution is solved by using Poisson's equation alone, with particular attention to the neighborhood of avalanche breakdown. Because of its generality and efficiency, the program emerges as a powerful engineering tool for the design of power devices incorporating special junction termination techniques. Results are presented for a DMOS structure to illustrate the improvement in breakdown voltage when a field plate is applied. Numerical solution techniques for solving elliptic partial differential equations in a multi-material domain are discussed. The discretization of this domain is nonuniform in general due to its highly nonuniform physical parameters. By careful selection of grid lines near interfaces, the difference equation coefficients are considerably simplified. The resultant matrix of coefficients is symmetric even though Neumann boundary conditions are specified.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Metal oxide semiconductor field-effect transistors -- Computer simulation.; Power semiconductors -- Computer simulation.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Electrical and Computer Engineering
Degree Grantor:
University of Arizona
Advisor:
Cart, John W.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleTwo-dimensional simulation of power MOSFET near breakdownen_US
dc.creatorYen, Chi-min, 1949-en_US
dc.contributor.authorYen, Chi-min, 1949-en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractA simulation program has been developed to facilitate the investigation and analysis of power semiconductor devices under the reverse-bias condition. The electrostatic potential distribution is solved by using Poisson's equation alone, with particular attention to the neighborhood of avalanche breakdown. Because of its generality and efficiency, the program emerges as a powerful engineering tool for the design of power devices incorporating special junction termination techniques. Results are presented for a DMOS structure to illustrate the improvement in breakdown voltage when a field plate is applied. Numerical solution techniques for solving elliptic partial differential equations in a multi-material domain are discussed. The discretization of this domain is nonuniform in general due to its highly nonuniform physical parameters. By careful selection of grid lines near interfaces, the difference equation coefficients are considerably simplified. The resultant matrix of coefficients is symmetric even though Neumann boundary conditions are specified.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectMetal oxide semiconductor field-effect transistors -- Computer simulation.en_US
dc.subjectPower semiconductors -- Computer simulation.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCart, John W.en_US
dc.identifier.proquest1333273en_US
dc.identifier.oclc20968110en_US
dc.identifier.bibrecord.b18409453en_US
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