Persistent Link:
http://hdl.handle.net/10150/276634
Title:
Avalanche characteristics of silicide Schottky barrier diodes
Author:
Yates, Kenneth Lee, 1959-
Issue Date:
1987
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
This thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3 to 1.5 mum spectral region. The avalanche process is used to amplify the signal prior to electrical interfacing in order to enhance the signal-to-noise ratio. The amount of multiplication is predicted by the impact ionization coefficients for electrons and holes, alpha and beta, respectively. By using PtSi Schottky diodes, where alpha > beta, pure electron injection can be accomplished by irradiating with photons of energy psi hnu Eg (where psi is the Schottky Barrier height and Eg is the bandgap of silicon), thus maximizing multiplication and minimizing noise. An alternative means for avalanching involves the quantum effects of impurity-band ionization. By using a heavily doped semiconductor and operating at low temperatures, one can achieve noise-free gain at lower electric field strengths. (Abstract shortened with permission of author.)
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Diodes, Schottky-barrier.; Infrared detectors.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Optical Sciences
Degree Grantor:
University of Arizona
Advisor:
Dereniak, E. L.

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleAvalanche characteristics of silicide Schottky barrier diodesen_US
dc.creatorYates, Kenneth Lee, 1959-en_US
dc.contributor.authorYates, Kenneth Lee, 1959-en_US
dc.date.issued1987en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThis thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3 to 1.5 mum spectral region. The avalanche process is used to amplify the signal prior to electrical interfacing in order to enhance the signal-to-noise ratio. The amount of multiplication is predicted by the impact ionization coefficients for electrons and holes, alpha and beta, respectively. By using PtSi Schottky diodes, where alpha > beta, pure electron injection can be accomplished by irradiating with photons of energy psi hnu Eg (where psi is the Schottky Barrier height and Eg is the bandgap of silicon), thus maximizing multiplication and minimizing noise. An alternative means for avalanching involves the quantum effects of impurity-band ionization. By using a heavily doped semiconductor and operating at low temperatures, one can achieve noise-free gain at lower electric field strengths. (Abstract shortened with permission of author.)en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectDiodes, Schottky-barrier.en_US
dc.subjectInfrared detectors.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorDereniak, E. L.en_US
dc.identifier.proquest1332547en_US
dc.identifier.oclc20061288en_US
dc.identifier.bibrecord.b16916542en_US
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