REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE

Persistent Link:
http://hdl.handle.net/10150/276394
Title:
REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE
Author:
Hendricks, Douglas Ray, 1958-
Issue Date:
1987
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Type:
text; Thesis-Reproduction (electronic)
Keywords:
Semiconductors -- Etching.
Degree Name:
M.S.
Degree Level:
masters
Degree Program:
Graduate College; Optical Sciences
Degree Grantor:
University of Arizona

Full metadata record

DC FieldValue Language
dc.language.isoen_USen_US
dc.titleREACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINEen_US
dc.creatorHendricks, Douglas Ray, 1958-en_US
dc.contributor.authorHendricks, Douglas Ray, 1958-en_US
dc.date.issued1987en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.typetexten_US
dc.typeThesis-Reproduction (electronic)en_US
dc.subjectSemiconductors -- Etching.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.identifier.proquest1330164en_US
dc.identifier.oclc17291839en_US
dc.identifier.bibrecord.b16255331en_US
dc.identifier.bibrecord.b18369856en_US
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