Persistent Link:
http://hdl.handle.net/10150/195314
Title:
Control of Plasma Etching of Semiconductor Surfaces
Author:
Zhu, Hongbin
Issue Date:
2005
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The current semiconductor device manufacturing requires more strict control of plasma etching. In this research, plasma etching was investigated through gas phase characterization and interface reactions. Hydrogen and nitrogen were added to Ar plasmas to manipulate the electro-physical properties that were measured by a Langmuir probe system. Hydrogen addition modified the EEDF (electron energy distribution function) by increasing the electrons in high energy range. Adding N2 formed a strong bi-Maxwellian distribution. Gas addition caused the transition between ohmic and stochastic heating. Ar-CH4-H2 and Ar-N2-H2 plasmas were also tested. Hydrogen atom beam was used on porous silicon dioxide based low-k films to remove silanol groups that were generated due to the damage of films during pattern transfer. At H2 atom beam process at 150 C moved close to 60% silanol groups were removed in less than 3 min with an etching rate of 15 A/min. The apparent activation energy was 2.4 kcal/mol. Hydrogen atoms reacted with Si-O-Si and methyl groups. The etching mechanisms of CH4/H2/Ar plasma for InP were analyzed by a beam reactor system. Sputtering yield was measured, threshold energy was approximately 60 eV. Inert ion beam assisted chemical reactions gave higher etching rate. The CH4 concentration had no strong effect on etching rate after 5%. Etching rate was not sensitive to temperature up to 150 C. The adsorption of methyl groups to the surface was proposed as rate limiting step. Chemical reaction effectively reduced the surface roughness.
Type:
text; Electronic Dissertation
Keywords:
plasma; plasma etching; EEDF; low-k; InP; ion beam
Degree Name:
PhD
Degree Level:
doctoral
Degree Program:
Chemical Engineering; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Muscat, Anthony J; Schabel, Michael J.
Committee Chair:
Muscat, Anthony J

Full metadata record

DC FieldValue Language
dc.language.isoENen_US
dc.titleControl of Plasma Etching of Semiconductor Surfacesen_US
dc.creatorZhu, Hongbinen_US
dc.contributor.authorZhu, Hongbinen_US
dc.date.issued2005en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe current semiconductor device manufacturing requires more strict control of plasma etching. In this research, plasma etching was investigated through gas phase characterization and interface reactions. Hydrogen and nitrogen were added to Ar plasmas to manipulate the electro-physical properties that were measured by a Langmuir probe system. Hydrogen addition modified the EEDF (electron energy distribution function) by increasing the electrons in high energy range. Adding N2 formed a strong bi-Maxwellian distribution. Gas addition caused the transition between ohmic and stochastic heating. Ar-CH4-H2 and Ar-N2-H2 plasmas were also tested. Hydrogen atom beam was used on porous silicon dioxide based low-k films to remove silanol groups that were generated due to the damage of films during pattern transfer. At H2 atom beam process at 150 C moved close to 60% silanol groups were removed in less than 3 min with an etching rate of 15 A/min. The apparent activation energy was 2.4 kcal/mol. Hydrogen atoms reacted with Si-O-Si and methyl groups. The etching mechanisms of CH4/H2/Ar plasma for InP were analyzed by a beam reactor system. Sputtering yield was measured, threshold energy was approximately 60 eV. Inert ion beam assisted chemical reactions gave higher etching rate. The CH4 concentration had no strong effect on etching rate after 5%. Etching rate was not sensitive to temperature up to 150 C. The adsorption of methyl groups to the surface was proposed as rate limiting step. Chemical reaction effectively reduced the surface roughness.en_US
dc.typetexten_US
dc.typeElectronic Dissertationen_US
dc.subjectplasmaen_US
dc.subjectplasma etchingen_US
dc.subjectEEDFen_US
dc.subjectlow-ken_US
dc.subjectInPen_US
dc.subjection beamen_US
thesis.degree.namePhDen_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineChemical Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorMuscat, Anthony Jen_US
dc.contributor.advisorSchabel, Michael J.en_US
dc.contributor.chairMuscat, Anthony Jen_US
dc.contributor.committeememberMuscat, Anthony J.en_US
dc.contributor.committeememberShadman, Farhangen_US
dc.contributor.committeememberSaez, A. Eduardoen_US
dc.contributor.committeememberDvorak, Stevenen_US
dc.contributor.committeememberParks, Harold G.en_US
dc.identifier.proquest1354en_US
dc.identifier.oclc137355200en_US
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