Electrochemical Studies in Fluoride Based Solutions for Semiconductor Processing Applications

Persistent Link:
http://hdl.handle.net/10150/195050
Title:
Electrochemical Studies in Fluoride Based Solutions for Semiconductor Processing Applications
Author:
Venkataraman, Nandini
Issue Date:
2010
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Fluoride based chemical systems are widely used at various stages in microelectronic processing, particularly for wet cleaning and etching applications. Some examples include the use of semi aqueous fluoride (SAF) solutions in back end of line cleaning, the use of dilute HF solutions as etchants for SiO2 and HF-HNO3 or HF-H2O2 solutions as isotropic etchants for silicon. In this work, the use of fluoride based solutions for two applications relevant to semiconductor processing are considered.In the first part of the study, cleaning of post plasma etch residues generated during fabrication of copper damascene structures was investigated in semi aqueous fluoride (SAF) formulations based on dimethyl sulfoxide and ammonium fluoride. Formulations designed for residue removal should be able to remove the residue effectively, without causing critical dimension loss during the process cycle. A systematic evaluation of solution variables (solvent content and pH) was conducted and the extent of removal of model copper oxide films and selectivity over copper and carbon doped oxide (CDO) films were used as metrics to evaluate the formulations. Results of the study indicate that the presence of solvent is necessary to achieve reasonable etch selectivity over dielectric films. Additionally, a removal end point detection technique based on electrochemical impedance spectroscopy was developed, which could potentially help in the optimization of cleaning time with minimal dielectric loss. This method was applied to monitor the removal of copper oxide films as well as residue from patterned test structures.In the second part of the study, electrochemical formation of porous silicon films in hydrofluoric acid (HF) solutions was investigated, for potential applications in advanced packaging. Specifically, porous silicon formation in solution mixtures containing HF, acetic acid and peroxide, was studied. The effect of variables including current density, substrate resistivity, HF, acetic acid and peroxide concentration, on key porous film characteristics such as growth rate, porosity and microstructure, was explored. Addition of peroxide was found to significantly increase the porosity and growth rate of the film, as a result of enhanced chemical dissolution and films with porosities as high as 95% were obtained. Additionally, in solutions containing peroxide, a variety of microstructural features, such as nanopores, micron sized pores, truncated pyramidal structures and silicon needles were observed, under various fabrication conditions.
Type:
text; Electronic Dissertation
Keywords:
Back End of Line cleaning; Porous silicon; Semiconductor processing; Use of fluoride solution
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Materials Science & Engineering; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Raghavan, Srini
Committee Chair:
Raghavan, Srini

Full metadata record

DC FieldValue Language
dc.language.isoENen_US
dc.titleElectrochemical Studies in Fluoride Based Solutions for Semiconductor Processing Applicationsen_US
dc.creatorVenkataraman, Nandinien_US
dc.contributor.authorVenkataraman, Nandinien_US
dc.date.issued2010en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractFluoride based chemical systems are widely used at various stages in microelectronic processing, particularly for wet cleaning and etching applications. Some examples include the use of semi aqueous fluoride (SAF) solutions in back end of line cleaning, the use of dilute HF solutions as etchants for SiO2 and HF-HNO3 or HF-H2O2 solutions as isotropic etchants for silicon. In this work, the use of fluoride based solutions for two applications relevant to semiconductor processing are considered.In the first part of the study, cleaning of post plasma etch residues generated during fabrication of copper damascene structures was investigated in semi aqueous fluoride (SAF) formulations based on dimethyl sulfoxide and ammonium fluoride. Formulations designed for residue removal should be able to remove the residue effectively, without causing critical dimension loss during the process cycle. A systematic evaluation of solution variables (solvent content and pH) was conducted and the extent of removal of model copper oxide films and selectivity over copper and carbon doped oxide (CDO) films were used as metrics to evaluate the formulations. Results of the study indicate that the presence of solvent is necessary to achieve reasonable etch selectivity over dielectric films. Additionally, a removal end point detection technique based on electrochemical impedance spectroscopy was developed, which could potentially help in the optimization of cleaning time with minimal dielectric loss. This method was applied to monitor the removal of copper oxide films as well as residue from patterned test structures.In the second part of the study, electrochemical formation of porous silicon films in hydrofluoric acid (HF) solutions was investigated, for potential applications in advanced packaging. Specifically, porous silicon formation in solution mixtures containing HF, acetic acid and peroxide, was studied. The effect of variables including current density, substrate resistivity, HF, acetic acid and peroxide concentration, on key porous film characteristics such as growth rate, porosity and microstructure, was explored. Addition of peroxide was found to significantly increase the porosity and growth rate of the film, as a result of enhanced chemical dissolution and films with porosities as high as 95% were obtained. Additionally, in solutions containing peroxide, a variety of microstructural features, such as nanopores, micron sized pores, truncated pyramidal structures and silicon needles were observed, under various fabrication conditions.en_US
dc.typetexten_US
dc.typeElectronic Dissertationen_US
dc.subjectBack End of Line cleaningen_US
dc.subjectPorous siliconen_US
dc.subjectSemiconductor processingen_US
dc.subjectUse of fluoride solutionen_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineMaterials Science & Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorRaghavan, Srinien_US
dc.contributor.chairRaghavan, Srinien_US
dc.contributor.committeememberDeymier, Pierreen_US
dc.contributor.committeememberSeraphin, Supapanen_US
dc.identifier.proquest10813en_US
dc.identifier.oclc659753672en_US
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