Persistent Link:
http://hdl.handle.net/10150/194104
Title:
Gas Phase Etching of Silicon Dioxide Films
Author:
Montano, Gerardo
Issue Date:
2006
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The gas phase etching of thermal silicon dioxide films was investigated with in situ Fourier Transformed Infrared Spectroscopy (FTIR) and ex situ X-ray Photoelectron Spectroscopy (XPS). The initiation process, the bulk etching of the oxide, and the termination mechanism were characterized as a function of reactant concentration, temperature, and pressure. The experiments were carried out in a custom made vessel with a gas panel and a data acquisition and control system (DA&C) capable of lowering flow and pressure disturbances originated by reactant introduction. The FTIR technique used to monitor the reaction in real time allowed distinguishing reactions that initiated in a gas/solid regime from reactions that started in a gas/liquid/solid regime. This study was focused on the gas/solid initiation process in order to expand the general assumption in published works that a condensed layer is previously required to initiate and sustain the reaction. It was found in this investigation that, depending on the experimental parameters, the water layer is not always a requisite for the initiation of the reaction but a consequence of the etching process. The FTIR data also showed the role in the initiation process of gas phase heterogeneous associated species, specifically (HF)H₂O and (HF)₂H₂O. After the initiation period, the experimental conditions determined the amount of water present on the surface of the sample, which in turn determined the local environment of the reaction and by extension the etching species. Reactions developing in a gas/solid regime were found to be slow, with etching rates of less than 1 °A/sec. Contrarily, reactions taking place in a gas/liquid/solid regime reached etching rates of 100 °A/sec, a maximum value determined by transport limitations. The condensed layer was found to be especially sensitive to temperature since a variation of 15 ° C changed the local environment from gas/liquid/solid to gas/solid. Finally, it was corroborated through the XPS analysis that the removal process in the gas phase leaves the silicon surfaces with high fluorine and oxygen concentrations in the form of SiFₓ and SiOH.
Type:
text; Electronic Dissertation
Keywords:
Data Acquisition and Control; Silicon dioxide; Etching; HF; H2O; Surface Phenomena
Degree Name:
PhD
Degree Level:
doctoral
Degree Program:
Chemical Engineering; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Muscat, Anthony J.
Committee Chair:
Muscat, Anthony J.

Full metadata record

DC FieldValue Language
dc.language.isoENen_US
dc.titleGas Phase Etching of Silicon Dioxide Filmsen_US
dc.creatorMontano, Gerardoen_US
dc.contributor.authorMontano, Gerardoen_US
dc.date.issued2006en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe gas phase etching of thermal silicon dioxide films was investigated with in situ Fourier Transformed Infrared Spectroscopy (FTIR) and ex situ X-ray Photoelectron Spectroscopy (XPS). The initiation process, the bulk etching of the oxide, and the termination mechanism were characterized as a function of reactant concentration, temperature, and pressure. The experiments were carried out in a custom made vessel with a gas panel and a data acquisition and control system (DA&C) capable of lowering flow and pressure disturbances originated by reactant introduction. The FTIR technique used to monitor the reaction in real time allowed distinguishing reactions that initiated in a gas/solid regime from reactions that started in a gas/liquid/solid regime. This study was focused on the gas/solid initiation process in order to expand the general assumption in published works that a condensed layer is previously required to initiate and sustain the reaction. It was found in this investigation that, depending on the experimental parameters, the water layer is not always a requisite for the initiation of the reaction but a consequence of the etching process. The FTIR data also showed the role in the initiation process of gas phase heterogeneous associated species, specifically (HF)H₂O and (HF)₂H₂O. After the initiation period, the experimental conditions determined the amount of water present on the surface of the sample, which in turn determined the local environment of the reaction and by extension the etching species. Reactions developing in a gas/solid regime were found to be slow, with etching rates of less than 1 °A/sec. Contrarily, reactions taking place in a gas/liquid/solid regime reached etching rates of 100 °A/sec, a maximum value determined by transport limitations. The condensed layer was found to be especially sensitive to temperature since a variation of 15 ° C changed the local environment from gas/liquid/solid to gas/solid. Finally, it was corroborated through the XPS analysis that the removal process in the gas phase leaves the silicon surfaces with high fluorine and oxygen concentrations in the form of SiFₓ and SiOH.en_US
dc.typetexten_US
dc.typeElectronic Dissertationen_US
dc.subjectData Acquisition and Controlen_US
dc.subjectSilicon dioxideen_US
dc.subjectEtchingen_US
dc.subjectHFen_US
dc.subjectH2Oen_US
dc.subjectSurface Phenomenaen_US
thesis.degree.namePhDen_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineChemical Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorMuscat, Anthony J.en_US
dc.contributor.chairMuscat, Anthony J.en_US
dc.contributor.committeememberShadman, Farhangen_US
dc.contributor.committeememberOgden, Kimberlyen_US
dc.identifier.proquest1453en_US
dc.identifier.oclc137355678en_US
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